Provided is a semiconductor package having improved signal integrity (SI) and a chip stack structure of a plurality of semiconductor chips. The semiconductor package includes a package substrate, a chip stack structure on the package substrate and including at least two semiconductor chips, and an external connection terminal on a lower surface of the package substrate. A first semiconductor chip arranged uppermost in the chip stack structure is connected to a first bonding pad of the package substrate through a first wire. A second semiconductor chip arranged under the first semiconductor chip in the chip stack structure is connected to a second bonding pad of the package substrate through a second wire. When the first bonding pad is farther from the external connection terminal than the second bonding pad, the external connection terminal is connected to the first bonding pad through a wiring line of the package substrate.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the leadframe, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A III-nitride-based semiconductor packaged structure includes a lead frame, an adhesive layer, a III-nitride-based die, an encapsulant, and at least one bonding wire. The lead frame includes a die paddle and a lead. The die paddle has first and second recesses arranged in a top surface of the die paddle. The first recesses are located adjacent to a relatively central region of the top surface. The second recesses are located adjacent to a relatively peripheral region of the top surface. The first recess has a shape different from the second recess from a top-view perspective. The adhesive layer is disposed on the die paddle to fill into the first recesses. The III-nitride-based die is disposed on the adhesive layer. The encapsulant encapsulates the lead frame and the III-nitride-based die. The second recesses are filled with the encapsulant. The bonding wire is encapsulated by the encapsulant.

The present invention concerns a method and a device for increasing the reliability of a power module composed of plural power semiconductors that are connected in parallel, the power semiconductors being connected to the external pins of the package of the power module through metallic connections. The invention - selects one power semiconductor among the power semiconductors connected in parallel according to a criterion. - applies a same input patient to the not selected power semiconductors connected in parallel. - increases the temperature of the selected power semiconductor in order to reach a target temperature of tlic power semicon- ductor dunng a time duration m order to achieve and interface grain homogenisation of the metallic connections of tlic selected power semiconductor. - applies the same input pattern to tlic selected pow er semiconductor after tlic time duration.

A method of calibrating an ultrasonic characteristic on a wire bonding system is provided. The method includes the steps of: (a) determining a reference ultrasonic characteristic for formation of a wire bond; (b) determining a reference non-stick ultrasonic characteristic that results in a non-stick wire bond condition; (c) determining a calibration non-stick ultrasonic characteristic, on a wire bonding system to be calibrated, that results in a non-stick wire bond condition; and (d) determining a calibration factor for the wire bonding system to be calibrated using the reference non-stick ultrasonic characteristic and the calibration non-stick ultrasonic characteristic.

This disclosure relates to a method of forming a wafer level chip scale semiconductor package, the method comprising: providing a carrier having a cavity formed therein; forming electrical contacts at a base portion and sidewalls portions of the cavity; placing a semiconductor die in the base of the cavity; connecting bond pads of the semiconductor die to the electrical contacts; encapsulating the semiconductor die; and removing the carrier to expose the electrical contacts, such that the electrical contacts are arranged directly on the encapsulation material.

An integrated circuit chip (die) may include a force mitigation system for reducing or mitigating under-pad stresses typically caused by wire bonding. The IC die may include wire bond pads and a force mitigation system formed below each wire bond pad. The force mitigation system may include a “shock plate” (e.g., metal region), a sealing layer located above the shock plate, and a force mitigation layer including an array of sealed voids between the metal region and the sealing layer. The sealed voids in the force mitigation layer may be defined by forming openings in an oxide dielectric layer and forming a non-conformal sealing layer over the openings to define an array of sealed voids. The force mitigation system may mitigate stresses caused by a wire bond on each wire bond pad, which may reduce or eliminate wire-bond-related damage to semiconductor devices located in the under-pad regions of the die.

A semiconductor device includes: a single die pad made of a metal or metal alloy and having a first surface, a second surface that is an opposite side of the first surface, and a pair of ground leads protruding from an end edge in plan view; a signal lead arranged between the ground leads; a plurality of leads arranged around the die pad in plan view; a semiconductor chip mounted on the second surface; bonding wires connecting a signal pad of the chip and the signal lead and connecting a ground pad of the chip and the ground leads; and a mold resin covering the die pad, the signal lead, the plurality of leads, the chip, and the bonding wires; wherein an interval between the signal lead and each of the ground leads is narrower than an interval between the plurality of leads.