In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.

In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.

According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method includes preparing a first substrate on which multiple projections distributed in a two-dimensional fashion are formed. The method includes stacking a first film over the multiple projections on the first substrate. The method includes stacking a second film on a second substrate. The method includes bonding a principal surface of the first film which is disposed on an opposite side of the first substrate to a principal surface of the second film which is disposed on an opposite side of the second substrate. The method includes performing irradiation with a laser beam from the first substrate. The method includes peeling the first substrate. A diameter of a spot area formed by the laser beam is larger than an average pitch between the projections arranged on the principal surface of the first substrate.