In a general aspect, a method for growing an InGaN optoelectronic in a reaction chamber, by MOCVD, includes controlling a surface temperature of a wafer to be at least 750° C. during growth of a light-emitting layer. The light emitting layer includes an InGaN quantum well layer having an In % of greater than 25%. The method further includes providing an indium-containing metalorganic precursor and a gallium-containing metalorganic precursor into the reaction chamber and to the wafer during growth of the light-emitting layer when the surface temperature of the wafer is greater than 750° C. The method also includes providing an N-containing species to the wafer at a rate such that a partial pressure of the N-containing species at the surface of the wafer is greater than 1.5 atmospheres during growth of the light-emitting layer of the optoelectronic device when the surface temperature of the wafer is greater than 750° C.

An optoelectronic component (10) is specified, comprising a semiconductor body (6) with an active region (4) suitable for emission of radiation and comprising a quantum well structure, wherein the quantum well structure comprises at least one quantum well layer (41) and barrier layers (42), a first electrical contact (1) and a second electrical contact (2), wherein the active region (4) comprises at least one intermixed region (44) and at least one non-intermixed region (43).

The at least one quantum well layer (41) and the barrier layers (42) are at least partially intermixed in the intermixed region (44), such that the intermixed region (44) comprises a larger electronic bandgap than the at least one quantum well layer (41) in the non-intermixed region (43). The first electrical contact (1) is a metal contact arranged on a radiation exit surface of the semiconductor body (6), wherein the intermixed region (44) is arranged below the first contact (1) in the vertical direction. Further, a method for producing the optoelectronic component (10) is specified.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

A method for manufacturing an electronic device includes providing a substrate, forming a plurality of connecting pads and a plurality of conductive portions partially overlapped by the plurality of connecting pads on a surface of the substrate; forming a plurality of conductive lines on the substrate, wherein the plurality of conductive lines are electrically connected to the plurality of conductive portions; and bonding a plurality of light emitting units to the plurality of connecting pads. The method may further includes identifying a defective light emitting unit from the plurality of light emitting units; removing the defective light emitting unit from a corresponding position on the substrate; and bonding-another light emitting unit to the corresponding position.

The forming of the tunnel junction layer includes forming a first n-type layer, forming a second n-type layer by introducing a first raw material gas into a furnace at a first temperature, the first raw material gas including a first gas having a first flow rate, and forming a third n-type layer by introducing a second raw material gas into a furnace at a second temperature, the second raw material gas including a second gas having a second flow rate, the second temperature being less than the first temperature. A first flow rate ratio of the first gas in the first raw material gas is greater than a second flow rate ratio of the second gas in the second raw material gas.

The present invention relates to a method of manufacturing a display device, and more particularly, to a chip dispenser for supplying a micro-LED. The present invention provides a chip dispenser including a body part for accommodating the fluid and the semiconductor light emitting device, and discharging the accommodated fluid and the semiconductor light emitting device, a pressure controller for varying the pressure inside the body; and a stirring part disposed in at least one of the inside and outside of the body, agitating the fluid accommodated in the body and the pressure controller increases the internal pressure of the body part so that the fluid and the semiconductor light emitting device are discharged to the outside in a state in which the agitating part stirs the fluid.

The application relates to a chip transfer method and a display device. The chip transfer method includes the following operations: providing a growth substrate; forming one or multiple chips on a surface of the growth substrate; and covering a first glue layer on a surface, away from the growth substrate, of the one or multiple chips; providing a first transient substrate covered with an uncured first thermosetting material layer; and attaching the first glue layer and the first thermosetting material layer; and curing the first thermosetting material layer so that an uneven surface of the first glue layer matches an uneven surface of the first thermosetting material layer to form a leveling layer.

The present disclosure provides a display panel and a method for manufacturing the same, wherein the display panel includes a substrate and a plurality of display units disposed on the substrate, and the plurality of display units are disposed in an array; wherein each of the display units is integrated with micro light-emitting diode (LED) chips and pulse width modulation (PWM) chips electrically connected to the micro LED chips, and PWM circuits are formed in the PWM chip PWM driving circuits, and the PWM circuit the PWM driving circuits are configured to control light emitting time of the micro LED chips.

Selective donor plates comprising at least one raised “mesa” and a release layer disposed over the top mesa surface are described, as well as their methods of use and their methods of fabrication. The use of selective donor plates including mesas and a release layer may enable reduced standoff distances and misplacement of components, as well as improve assembly time of devices.

The present invention provides a LED display having a simplified driving circuit while preventing defective images. The light-emitting element has a pixel light-emitting part corresponding to one pixel. The pixel light-emitting part has three subpixel light-emitting parts. Each of the subpixel light-emitting parts has a first partial light-emitting part and a second partial light-emitting part connected in parallel. The first partial light-emitting part has a p-electrode. The second partial light-emitting part has a p-electrode. The driving circuit has one transistor for one subpixel light-emitting part. One electrode of the transistor is electrically connected to the first partial light-emitting part through the p-electrode and the second partial light-emitting part through the p-electrode.