A display device includes a substrate, an interlayer insulating layer over the substrate, a metal layer over the interlayer insulating layer, and a light emitting element over the metal layer. The interlayer insulating layer includes a plurality of a first depressed portions. The metal layer includes a first region bonding to the light emitting element and a second region surrounding the first region. The second region, a plurality of second depressed portions is provided along the plurality of first depressed portions.

Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

Light extraction efficiency of existing semiconductor light emitting devices can be increased significantly by introducing a nanoparticle ‘meta-grid’ on top of a conventional light emitting diode (LED) chip, within its usual encapsulating packaging or casing. The ‘meta-grid’ is essentially a monolayer or a 2D array of sub-wavelength metallic nanoparticles (NPs) with sub-wavelength inter-particle separation. The local dielectric environment around the NPs and within the gaps between the NPs could be the same as the encapsulant, or any other optically transparent material with refractive index close to that of the encapsulant. Upon optical excitation, the collective oscillations of conduction electrons, or surface plasmon, of the metallic NPs give rise to localized surface plasmon resonances. When placed on top of the LED chip, which acts as a high refractive index substrate for the NPs, these NPs can couple strongly to the light emitted by the chip, acting as efficient resonant plasmonic antennae or scatterers for light. The plasmon-mediated light coupling can by optimized by tuning the composition, size, and shape of the NPs, their inter-particle gaps and their distance from the LED chip surface. By virtue of the localized-surface-plasmon-enhanced light transmission through the optimized NP ‘meta-grid’, the efficiency of extraction of the light generated by the semiconductor LED chip into its encapsulating casing can be significantly improved.

A manufacturing method of a reflective display includes at least the following steps. A reflective display module having a display surface is provided. An adhesive is formed on the display surface of the reflective display module. A plurality of microstructures is formed on the adhesive. A cover plate is provided over the reflective display module, the microstructures, and the adhesive. The cover plate has a first surface, a second surface, and a third surface. The second surface is located between the first surface and the reflective display module, and the third surface is connected to the first surface and the second surface. The second surface of the cover plate is adhered to the adhesive having the microstructures thereon to bond the microstructures onto the second surface of the cover plate. A light source is disposed adjacent to the third surface of the cover plate.

A bonded semiconductor device including an epitaxial layer, and a support substrate made of a material different from that of the epitaxial layer and bonded to the epitaxial layer. Any one of the epitaxial layer and the support substrate has a bonding surface with a radial pattern including recesses or protrusions radially spreading from a certain point on the bonding surface as a center.

Disclosed are a light emitting structure and a preparation method therefor. The method includes: forming a mask layer on a n-type substrate, disposing a plurality of openings in the mask layer; and forming a light emitting unit in each of the plurality of openings, including: forming a metal atomic layer in the opening; forming an n-type semiconductor layer on the metal atomic layer, and forming a light extraction structure on the n-type semiconductor layer; and sequentially forming an active layer and a p-type semiconductor layer on the n-type semiconductor layer and the light extraction structure. In this way, step of peeling off the substrate may be avoided. In addition, with a plurality of discrete light emitting structures formed on the same substrate, a step of cutting a device is avoided, and damage to the device can be prevented.

A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.

A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

Emissive display devices having LED sources with super-lambertian radiation patterns. An exemplary emission source may have a half-emission-cone-angle of less than 40°. A system, such as an augmented reality display system, employing such an emissive display device may display a reduction in power of up to three times relative to LED sources with a lambertian radiation pattern. In some systems, such as augmented reality display systems, the optical path down stream of such an emissive display device may be simplified and/or dimensionally scaled, and/or manufactured to lower tolerances. For example, a discrete collimating lens may be eliminated from the optical path of such an emissive display device.