Patent classifications
H01L31/02019
LIGHT DETECTION DEVICES WITH PROTECTIVE LINER AND METHODS RELATED TO SAME
Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.
POWER SYSTEM BASED ON BETA SOURCE AND METHOD FOR OPERATING THE SAME
Provided herein are a power system based on a beta source and an operating method thereof. The system includes a power generating section including a plurality of beta source-based generators, a power storage section including a plurality of power storages to store electrical energy which is generated from the generators, a multiplexer configured to select at least some of the storages, an optical power learning section to receive electrical signals provided from the storages, and estimate a state of charge (SOC) of each of the storages, through machine learning, an optimal power selecting section to select a power storage, which provides the optimal power, based on the SOC of each of the storages, an output section including a plurality of output devices to output power provided from the storage selected by the optimal power selecting section, and a de-multiplexer to select at least one output device of the output devices.
Optical communication connector, optical transmitter, optical receiver, optical communication system, and optical communication cable
To provide an optical communication connector, an optical transmitter, an optical receiver, an optical communication system, and an optical communication cable that make it possible to prevent reduction in communication quality at low cost. An optical communication connector according to the present technology is capable of spatial optical coupling, and the optical communication connector includes a first lens and a second lens. The first lens magnifies light emitted from a light emitter. The second lens shapes light incident from the first lens and outputs the shaped light.
THIN FILM TRANSISTOR BASED LIGHT SENSOR
The present disclosure describes an embodiment of a thin film transistor based light sensor circuit. The thin film transistor based light sensor circuit includes two thin film transistors, in which a channel region of one of the thin film transistors includes a light sensing area and a channel region of the other thin film transistor has a capping material disposed thereon. The thin film transistor based light sensor circuit further includes a comparator device electrically coupled to the two thin film transistors and configured to detect a current difference between the thin film transistors in response to the thin film transistor with the channel region having the light sensing area being exposed to light.
Photodiode and Method for Operating a Photodiode
In an embodiment a photodiode includes a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area from the radiation to be detected.
Light reception device and distance measurement module
The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.
Single servo loop controlling an automatic gain control and current sourcing mechanism
A single servo control loop for amplifier gain control based on signal power change over time or system to system, having an amplifier configured to receive an input signal on an amplifier input and generate an amplified signal on an amplifier output. The differential signal generator processes the amplified signal to generate differential output signals. The single servo control loop processes the differential output signal to generates one or more gain control signals and one or more current sink control signals. A gain control system receives a gain control signal and, responsive thereto, controls a gain of one or more amplifiers. A current sink receives a current sink control signal and, responsive thereto, draws current away from the amplifier input. Changes in input power ranges generate changes in the integration level of the differential signal outputs which are detected by the control loop, and responsive thereto, the control loop dynamically adjusts the control signals.
Device including optofluidic sensor with integrated photodiode
A “lab on a chip” includes an optofluidic sensor and components to analyze signals from the optofluidic sensor. The optofluidic sensor includes a substrate, a channel at least partially defined by a portion of a layer of first material on the substrate, input and output fluid reservoirs in fluid communication with the channel, at least a first radiation source coupled to the substrate adapted to generate radiation in a direction toward the channel, and at least one photodiode positioned adjacent and below the channel.
LIGHT RECEIVING ELEMENT AND RANGING MODULE
The present technology relates to a light receiving element and a ranging module that can improve characteristics. A light receiving element includes: light receiving regions each including a first voltage application unit to which a first voltage is applied, a first charge detection unit provided around the first voltage application unit, a second voltage application unit to which a second voltage different from the first voltage is applied, and a second charge detection unit provided around the second voltage application unit; and an isolation portion that is arranged at a boundary between the light receiving regions adjacent to each other, and isolates the light receiving regions from each other. The present technology can be applied to a light receiving element.
Photocoupler
A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.