A light detector according to an embodiment includes a light receiver and a controller. The controller is configured to set first and second light-receiving regions. The first light-receiving region includes first and second pixel regions. The second light-receiving region includes a third pixel region. An area of the third pixel region is larger than a total area of the first and second pixel regions. The light receiver is configured to, when light is applied: cause each of the first and second pixel regions within the first light-receiving region to individually output a signal; and cause the third pixel region within the second light-receiving region to output signals collectively.

[Object] Provided are a light receiving device and a light receiving circuit that are capable of performing highly accurate ranging with an increased field of view (FOV).

[Solving Means] A light receiving device according to the present disclosure includes a light detector array including a plurality of pixels each configured to output a pulse in response to a reaction of a light detector with a photon, a counter circuit configured to count the pulse outputted from at least one of the pixels of the light detector array, and a control circuit configured to select, from the light detector array, one of the pixels to be enabled and one of the pixels to be disabled, on the basis of the number of counts of the pulse from the counter circuit.

Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.

An exemplary wearable brain interface system includes a head-mountable component and a control system. The head-mountable component includes an array of photodetectors that includes a photodetector comprising a single-photon avalanche diode (SPAD) and a fast-gating circuit configured to arm and disarm the SPAD. The control system is for controlling a current drawn by the array of photodetectors.

Described herein is an electronic device, including a pixel and a turn-off circuit. The pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage node and an anode selectively coupled to ground through an enable circuit, and a clamp diode having an anode coupled to the anode of the SPAD and a cathode coupled to a turn-off voltage node. The turn-off circuit includes a sense circuit coupled between the turn-off voltage node and ground and configured to generate a feedback voltage, and a regulation circuit configured to sink current from the turn-off voltage node to ground based upon the feedback voltage such that a voltage at the turn-off voltage node maintains generally constant.

A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.

A light receiving device includes a light receiver including pixels and a light receiving area. The pixels are arranged in an array in a first direction and in a second direction intersecting with the first direction and each of the pixels has one light receiving element or more. The light receiving area has continuous pixels out of the pixels, outputs signals based on intensities of light received in the continuous pixels, and is changed in position in the light receiver according to a signal indicating a position in the first direction and a position in the second direction.

A Light Detection And Ranging (LIDAR) measurement circuit includes a control circuit configured to receive respective detection signals output from one or more single-photon detectors in response to a plurality of photons incident thereon. The control circuit includes a photon counter circuit including a digital counter circuit and an analog counter circuit, the digital counter circuit being responsive to an output of the analog counter circuit or the analog counter circuit being responsive to an output of the digital counter circuit to count detection of respective photons of the plurality of photons based on the respective detection signals, and a time integration circuit configured to output a time integration signal representative of respective times of arrival indicated by the respective detection signals. The control circuit is configured to calculate an estimated time of arrival of the plurality of photons based on a ratio of the time integration signal and the count of the detection of the respective photons of the plurality of photons.

The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

Provided are methods, systems, and computer program products for a LiDAR with an increased dynamic range. The method includes filtering output pulses of an SiPM device to a substantially symmetric pulse shape and capturing timing information and intensity information of the filtered output pulses for at least one predetermined intensity level. The method includes monitoring saturation of the SiPM device, wherein a width of a saturation plateau of a respective output pulse is determined in response to saturation of the SiPM device. The method also includes extrapolating additional timing information and additional intensity information of the respective output pulse using the captured timing information, the captured intensity information, and the determined width of the saturation plateau.