Provided is a composition with which a film that allows transmission of infrared light in a state where noise generated from visible light is small can be formed. In addition, provided are a film, a laminate, an infrared transmitting filter, a solid image pickup element, and an infrared sensor. This composition includes: a coloring material that allows transmission of infrared light and shields visible light; an infrared absorber; and a curable compound, in which the infrared absorber includes a material that shields light in a wavelength range of longer than 1000 nm and 1200 nm or shorter. In the composition, a ratio A/B of a minimum value A of an absorbance of the composition in a wavelength range of 400 to 1100 nm to a maximum value B of an absorbance of the composition in a wavelength range of 1400 to 1500 nm is 4.5 or higher.

A sensor package includes a semiconductor sensor chip having multiple light sensitive regions each of which defines a respective light sensitive channel. An optical filter structure is disposed over the sensor chip and includes filters defining respective spectral functions for different ones of the light sensitive channels. In particular, the optical filter structure includes at least three optical filters defining spectral functions for tristimulus detection by a first subset of the light sensitive channels, and at least one additional optical filter defining a spectral function for spectral detection by a second subset of the light sensitive channels encompassing a wavelength range that differs from that of the first subset of light sensitive channels.

The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material. The second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor. A passivation layer is disposed on the second semiconductor material. The passivation layer includes the first semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material.

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.

A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.

A light receiving element of the present disclosure includes a wire grid polarizing element, wavelength selection means, and a photoelectric conversion portion from a light incident side, and the wavelength selection means includes a plurality of wavelength selection members, and the wavelength selection members constituted by a plasmon filter transmit light having different wavelengths.

A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.

The present disclosure provides an optical sensor, an optical distance sensing module and a fabricating method thereof. According to the embodiments of the present disclosure, the optical sensor includes an optical sensing layer, a light transmitting layer and a light blocking layer. The optical sensing layer includes an array of optical sensing elements, the light transmitting layer is coated on the optical sensing layer, and the light blocking layer includes one or more light incident holes and is coated on the light transmitting layer. The optical sensing layer, the light transmitting layer and the light blocking layer are packaged as a wafer die. Light passes through the light incident holes and transmits through the light transmitting layer to irradiate on the array of optical sensing elements. The optical sensor effectively reduces the thickness, size and weight of the optical sensor, thereby expanding the application range of the optical sensor.

In an illuminance sensor, a slow axis of a first portion comprises a relation of +45° or -45° in regard to a first polarization direction that is a polarization direction of the a linear polarization plate, a relation of a slow axis of a second portion in regard to the first polarization direction is -45° or +45° that is opposite in sign to the relation of the slow axis of the first portion in regard to the first polarization direction, and a slow axis of a second quarter-wave plate comprises a relation of +45° or -45° in regard to a second polarization direction that is a polarization direction of a second linear polarization plate, wherein the relation of the slow axis of the second quarter-wave plate in regard to the second polarization direction is the same with the relation of the slow axis of the first portion in regard to the first polarization direction.

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.