Disclosed is a color solar cell module including a transparent substrate, a plurality of solar cells disposed on one side of the transparent substrate and each having a light receiving part, and a color layer disposed on a surface of each of the plurality of solar cells on an opposite side surface of the light receiving part.

An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.

A resin composition includes: a compound represented by Formula (1); and a resin, in the formula, A and B each independently represent an aromatic hydrocarbon ring or an aromatic heterocycle, Ra and Rb each independently represent a substituent, m1 represents an integer of 0 to mA, m2 represents an integer of 0 to mB, Y.sup.1 and Y.sup.2 each independently represent an alkyl group, an aryl group, a group represented by Formula (Y-1), or a group represented by Formula (Y-2), and at least one of Y.sup.1 or Y.sup.2 represents a group represented by Formula (Y-1) or a group represented by Formula (Y-2). ##STR00001##

In an illuminance sensor, a slow axis of a first quarter-wave plate has a relation of +45° or −45° in regard to a polarization direction of a first linear polarization plate; a relation of a slow axis of a first portion of a second quarter-wave plate in regard to a polarization direction of a second linear polarization plate is the same with relation of the slow axis of the first quarter-wave plate in regard to the polarization direction of the first linear polarization plate, that is, +45° or −45°; and a relation of a slow axis of a second portion of the second quarter plate in regard to the polarization direction of the second linear polarization plate is −45° or +45° that is opposite in sign to the relation of the slow axis of the first quarter-plate in regard to the polarization direction of the first linear polarization plate.

An optical sensor including a planar nano-photonic microlens array and an electronic apparatus including the same are provided. The optical sensor may include: a sensor substrate including a plurality of photosensitive cells for sensing light; a filter layer provided on the sensor substrate; and a planar nano-photonic microlens array provided on the filter layer, and including a plurality of planar nano-photonic microlenses, wherein the plurality of planar nano-photonic microlenses are two-dimensionally arranged in a first direction and a second direction that is perpendicular to the first direction, and each of the planar nano-photonic microlenses include nano-structures arranged such that the light transmitting through each of the planar nano-photonic microlenses has a phase profile in which a phase change curve is convex in the first direction and the second direction.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.