The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

A solar cell including at least a first layer made of a semiconductor material for absorbing photons from light radiation and releasing charge carriers, and at least one conductive layer, overlapping the first layer, adapted to allow the light radiation to enter into the solar cell towards the first layer and to collect the charge carriers released by the first layer, the solar cell where the conductive layer includes at least three overlapped layers, including a transparent intermediate metal layer, made of metal, and two transparent oxide layers, made of a conductive oxide, where the two oxide layers are an inner oxide layer and an outer oxide layer surrounding the transparent intermediate metal layer to provide a low resistance path for the electrical charges and to maximize the amount of light radiation entering the solar cell. The embodiments also include a solar cells module including said solar cell.

A solar cell of an embodiment includes: a p-electrode in which a first p-electrode and a second p-electrode are laminated; a p-type light-absorbing layer in direct contact with the first p-electrode; an n-type layer in direct contact with the p-type light-absorbing layer; and an n-electrode. The first p-electrode is disposed between the p-type light-absorbing layer and the second p-electrode. The p-type light-absorbing layer is disposed between the n-type layer and the first p-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. The first p-electrode includes a metal oxide containing Sn as a main component.

An integrated tandem solar cell includes a first solar cell including a rear electrode, a light absorption layer disposed on the rear electrode, and a buffer layer disposed on the light absorption layer; a recombination layer including a first transparent conductive layer disposed on the buffer layer; a nanoparticle layer that is transparent and conductive, that is disposed on the first transparent conductive layer, and that planarizes the first solar cell; and a second transparent conductive layer disposed on the nanoparticle layer; and a second solar cell that is a perovskite solar cell including a perovskite layer and that is disposed on and bonded to the second transparent conductive layer of the recombination layer. The recombination layer electrically joins the first and second solar cells and planarizes the first solar cell so that the second solar cell is uniformly deposited in all regions thereof.

A photovoltaic module includes a first transparent electrode layer characterized by a first sheet resistance, a second transparent electrode layer, and a photovoltaic material layer. The photovoltaic material layer is located between the first transparent electrode layer and the second transparent electrode layer. The photovoltaic module also includes a first busbar having a second sheet resistance lower than the first sheet resistance. The first transparent electrode layer, the second transparent electrode layer, and the photovoltaic material layer have an aligned region that forms a central transparent area of the photovoltaic module. The central transparent area including a plurality of sides. The first busbar is in contact with the first transparent electrode layer adjacent to at least a portion of each of the plurality of sides of the central transparent area.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

A photoelectric conversion element includes: a first photoelectric conversion layer including: a bottom electrode; a photoelectric conversion layer; and a top electrode; and a second photoelectric conversion part including: a bottom electrode; a photoelectric conversion part; and a top electrode. A conductive layer is formed on the bottom electrode. The top electrode and the bottom electrode are electrically connected by a conductive portion and the conductive layer. The conductive portion is formed of a part of the top electrode filled in a first groove that makes a surface of the conductive layer exposed and separates a photoelectric conversion layer and a photoelectric conversion layer from each other. The top electrodes are physically separated by a second groove provided to make a step surface of a stepped portion provided in the photoelectric conversion layer exposed and have a bottom surface thereof overlap the surface of the conductive layer.

The present invention discloses a light sensing unit of a light sensing device including a light sensing element and a switching element. The light sensing element includes a gate, a semiconductor layer, a gate insulating layer, a source, and a drain. The gate and the semiconductor layer are disposed on a substrate, the gate insulating layer separates the gate from the semiconductor layer, and the source and the drain are connected to the semiconductor layer respectively. At least one of the source and the drain are formed of a light-transmissive conductive layer. The semiconductor layer is disposed between one of the source and the drain and the gate, and when viewed along a normal direction of the substrate, the gate overlaps the one of the source and the drain, and the gate does not overlap another one of the source and the drain.

A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.

A visibly transparent planar structure using a CPA scheme to boost the absorption of a multi-layer thin-film configuration, requiring no surface patterning, to overcome the intrinsic absorption limitation of the absorbing material. This is achieved in a multi-layer absorbing Fabry-Perot (FP) cavity, namely a thin-film amorphous silicon solar cell. Omni-resonance is achieved across a bandwidth of 80 nm in the near-infrared (NIR), thus increasing the effective absorption of the material, without modifying the material itself, enhancing it beyond its intrinsic absorption over a considerable spectral range. The apparatus achieved an increased external quantum efficiency (EQE) of 90% of the photocurrent generated in the 80 nm NIR region from 660 to 740 nm as compared to a bare solar cell. over the spectral range of interest.