A plurality of lead pins (2a-d) penetrates through a stem (1) having a circular shape and includes a signal lead pin (2a,2b). A block (4) is provided on an upper surface of the stem. A waveguide light receiving device (9) is provided on a side surface of the block. An amplifier (6) is provided on the side surface of the block and amplifies an electric signal output from the waveguide light receiving device. A first relay substrate is provided on the upper surface of the stem and arranged between the block and the signal lead pin. A first transmission line (12a,12b) is provided on the first relay substrate. A first wire (10f,10g) connects one end of the first transmission line and an output terminal of the amplifier. A second wire (10h,10i) connects the other end of the first transmission line (12a,12b) and the signal lead pin.

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

The present disclosure relates to a reflective device and a display apparatus. In one embodiment, a reflective device includes: a resonant cavity configured to reflect a light of a first wavelength range; and a light conversion structure disposed within the resonant cavity and configured to convert an incident light of a second wavelength range into the light of the first wavelength range.

An optical element device includes an opto-electric hybrid board sequentially including an optical waveguide having a mirror, and an electric circuit board having a terminal in a thickness direction, and an optical element optically connected to the mirror and electrically connected to the terminal. The opto-electric hybrid board includes a mounting region including the mirror and the terminal when projected in the thickness direction and mounted with the optical element. Furthermore, the opto-electric hybrid board includes an alignment mark for aligning the optical element with respect to the mirror. The alignment mark is made of a material for forming the optical waveguide, and disposed at both outer sides of the mounting region in a width direction.

A semiconductor optical sensor (1) is provided with: a substrate (2) integrating a plurality of photodetector active areas (4); and a CMOS layer stack (6) arranged on the substrate (2) and including a number of dielectric (6a) and conductive (6b) layers. UV conversion regions (10) are arranged above a number of first photodetector active areas (4) to convert UV light radiation into visible light radiation towards the first photodetector active areas (4), so that the first photodetector active areas (4) are designed to detect UV light radiation. In particular, the first photodetector active areas (4) are alternated to a number of second photodetector active areas (4), designed to detect visible light radiation, in an array (15) of photodetection units (16) of the optical sensor (1), defining a single image detection area (15′), sensitive to both UV and visible light radiation with a same spatial resolution.

A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.

A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.

Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.

The misalignment between light reception lenses and light reception elements in a lens integrated light reception element for converting a plurality of optical signals with different wavelengths into electric signals is easily inspected. The lens integrated light reception element includes one or more light reception lenses that receive the optical signals, one or more light reception elements each disposed on a main axis of the light reception lens and converting the optical signal into the electric signal, one or more inspection pinholes through which illumination light passes, and one or more inspection lenses each including a main axis parallel to the main axis of the light reception lens and converging the illumination light having passed through the inspection pinhole.