A semiconductor device is provided, which includes a substrate, a first semiconductor structure, a plurality of first holes, a first dielectric structure and a second semiconductor structure. The first semiconductor structure is located on the substrate. The first holes are periodically arranged in the first semiconductor structure. The first dielectric structure is filled in one or more of the first holes. The second semiconductor structure is located on the first semiconductor structure.

A light sensing module includes a substrate, a light sensing unit, a first light-transmissive component, and a light shielding layer. The light sensing unit is disposed on the substrate to sense an intensity of a working light beam, and has an upper light receiving surface and a lateral surface perpendicular to the upper light receiving surface. The first light-transmissive component covers the light sensing unit, and has a first refractive index between a refractive index of the light sensing unit and a refractive index of air. The light shielding layer surrounds the lateral surface and is covered by the first light-transmissive component.

An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

A filter for infrared radiation is provided as a photonic cooler coating. The filter for infrared radiation includes a first metal oxide; a second metal oxide; and a metal layer, wherein the first metal oxide layer is provided between the second metal oxide layer and the metal layer.

The present technology relates to an electromagnetic wave processing device that enables reduction of color mixture. Provided are a photoelectric conversion element formed in a silicon substrate, a narrow band filter stacked on a light incident surface side of the photoelectric conversion element and configured to transmit an electromagnetic wave having a desired wavelength, and interlayer films respectively formed above and below the narrow band filter, and the photoelectric conversion element is formed at a depth from an interface of the silicon substrate, the depth where a transmission wavelength of the narrow band filter is most absorbed. The depth of the photoelectric conversion element from the silicon substrate becomes deeper as the transmission wavelength of the narrow band filter is longer. The present technology can be applied to an imaging element or a sensor using a plasmon filter or a Fabry-Perot interferometer.

The present invention relates to a method of making a light converting optical system. The method involves providing a first optical layer having a microstructured front surface comprising an array of linear grooves that reflect first light rays using total internal reflection and deflect second light rays using refraction. A thin sheet of reflective light scattering material is positioned parallel to the first optical layer. A second optical layer is provided with a microstructured front surface. A continuous photoabsorptive film layer comprising a light converting semiconductor material is positioned between the first optical layer and the reflective material, with a thickness less than the minimum thickness required for absorbing all light traversing through the film layer. The method further involves providing a light source and positioning the second optical layer on the light path between the light source and the photoabsorptive film layer.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

In an illuminance sensor, a slow axis of a first quarter-wave plate has a relation of +45° or −45° in regard to a polarization direction of a first linear polarization plate; a relation of a slow axis of a first portion of a second quarter-wave plate in regard to a polarization direction of a second linear polarization plate is the same with relation of the slow axis of the first quarter-wave plate in regard to the polarization direction of the first linear polarization plate, that is, +45° or −45°; and a relation of a slow axis of a second portion of the second quarter plate in regard to the polarization direction of the second linear polarization plate is −45° or +45° that is opposite in sign to the relation of the slow axis of the first quarter-plate in regard to the polarization direction of the first linear polarization plate.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.