A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

A method for bonding two superconducting integrated circuits (“chips”), such that the bonds electrically interconnect the chips. A plurality of indium-coated metallic posts may be deposited on each chip. The indium bumps are aligned and compressed with moderate pressure at a temperature at which the indium is deformable but not molten, forming fully superconducting connections between the two chips when the indium is cooled down to the superconducting state. An anti-diffusion layer may be applied below the indium bumps to block reaction with underlying layers. The method is scalable to a large number of small contacts on the wafer scale, and may be used to manufacture a multi-chip module comprising a plurality of chips on a common carrier. Superconducting classical and quantum computers and superconducting sensor arrays may be packaged.

The present specification relates to a polymer including a first unit of Chemical Formula 1; a second unit of Chemical Formula 2; and a third unit of Chemical Formula 3 or 4, and an organic solar cell including the same.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

A quantum computing system for converting Pauli errors of one or more qubits to erasure errors in a photonic quantum computing architecture. Two or more photonic qubits may be input to a quantum computing system, where at least one first qubit of the two or more qubits has experienced a Pauli error. A sequence of linear optical circuitry operations may be performed on the two or more qubits to generate two or more modified qubits, wherein the sequence of operations transforms one or more of the first qubits from a logical subspace of a Fock space to an erasure subspace of the Fock space. A cluster state for universal quantum computing may be generated from the two or more modified qubits using probabilistic entangling gates. A quantum computational algorithm may be performed using the quantum cluster state generated from the two or more modified qubits.

An aspect of the present disclosure is a method that includes combining a first organic salt (A.sup.1X.sup.1), a first metal salt (M.sup.1(X.sup.2).sub.2), a second organic salt (A.sup.2X.sup.3), a second metal salt (M.sup.2Cl.sub.2), and a solvent to form a primary solution, where A.sup.1X.sup.1 and M.sup.1(X.sup.2).sub.2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A.sup.2X.sup.3 to M.sup.2Cl.sub.2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A.sup.1 or A.sup.2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

An aspect of the present disclosure is a method that includes combining a first organic salt (A.sup.1X.sup.1), a first metal salt (M.sup.1(X.sup.2).sub.2), a second organic salt (A.sup.2X.sup.3), a second metal salt (M.sup.2Cl.sub.2), and a solvent to form a primary solution, where A.sup.1X.sup.1 and M.sup.1(X.sup.2).sub.2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A.sup.2X.sup.3 to M.sup.2Cl.sub.2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A.sup.1 or A.sup.2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

The present invention relates to a radiation detector (100) comprising: i) a substrate (110); ii) a sensor, which is coupled to the substrate, the sensor comprising a first array (120) of sensor pixels, a second array (130) of signal read-out elements, and an electronic circuitry which is configured to provide image data based on signals received from the signal read-out elements; iii) a transducer, which is coupled to the substrate and to the sensor, the transducer comprising a third array (140) of subpixels, wherein at least two subpixels are assigned to one sensor pixel; wherein the second array of signal read-out elements and the third array of subpixels correspond to each other; wherein each of the subpixels comprises a radiation conversion material.