The present invention relates to a method for producing highly doped polycrystalline semiconductor layers on a semiconductor substrate, wherein a first Si precursor composition comprising at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition comprising at least one second dopant is applied to one or more other regions of the surface of the semiconductor substrate, where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; and the coated regions of the surface of the semiconductor substrate are each converted, so as to form polycrystalline silicon from the Si precursor. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.

The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a silicon wafer. The amorphous silicon is then annealed so as to generate a layer of polycrystalline silicon on the substrate.

A silicon-on-insulator (SOI) substrate includes a silicon dioxide layer and a silicon layer. A detection region receives a detected optical mode coupled to an incident optical mode defined by an optical waveguide in the silicon layer. The detection region consists essentially of an intrinsic semiconductor material with a spacing structure surrounding at least a portion of the detection region, which comprises p-type, n-type doped semiconductor regions adjacent to first, second portions, respectively, of the detection region. A dielectric layer is deposited over at least a portion of the spacing structure. The silicon layer is located between the dielectric layer and the silicon dioxide layer. First, second metal contact structures are formed within trenches in the dielectric layer electrically coupling to the p-type, n-type doped semiconductor regions, respectively, without contacting any of the intrinsic semiconductor material of the detection region.

The present invention relates to an alkaline etching agent for treating a surface of a semiconductor substrate for solar cells, containing at least one hydroxystyrene polymer represented by the general formula (1) and an alkaline agent. According to the present invention, some effects are exhibited that the texture formation is made possible to a semiconductor substrate for solar cells at relatively lower temperatures with a shorter amount of time, thereby having excellent productivity.

History of commercial production of solar cells made from polysilicon material (E.sub.ff =15 -17%) and from amorphous silicon (Eff = 9 - 12%) has accumulated understanding of deficiencies and limitations of these solar cells. The present design combines following technical requirements: a) ability to harvest energy from widest part of sun spectrum; b) offer highest values of absorption coefficient for photons of the selected part of sun spectrum; c) ensure highest efficiency of conversion of incident photons into electron-hole pairs or photocarriers while ensuring lowest recombination rate; d) The simplicity of fabrication and low cost of mass production.

A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

A solar cell includes: a crystalline semiconductor substrate of a first conductivity type; a first semiconductor layer provided on a first region on one principal surface of the substrate; a second semiconductor layer provided on a second region on the one principal surface different from the first region; a first transparent electrode layer provided on the first semiconductor layer; and a second transparent electrode layer provided on the second semiconductor layer. The first semiconductor layer includes a first amorphous semiconductor layer of the first conductivity type and a first crystalline semiconductor part extending from the one principal surface toward the first transparent electrode layer. The second semiconductor layer includes a second amorphous semiconductor layer of a second conductivity type different from the first conductivity type.

One embodiment can provide a photovoltaic roof tile. The photovoltaic roof tile can include a transparent front cover, a transparent back cover, and a plurality of polycrystalline-Si-based photovoltaic structures positioned between the front cover and the back cover. A respective polycrystalline-Si-based photovoltaic structure has a front surface facing the front cover and a back surface facing the back cover. The photovoltaic roof tile can further include a paint layer positioned on a back surface of the back cover facing away from the front cover. A color of the paint layer substantially matches a color of the front surface of the respective polycrystalline-Si-based photovoltaic structure.