Patent classifications
H01L31/03923
Integrated tandem solar cell and manufacturing method thereof
An integrated tandem solar cell includes a first solar cell including a rear electrode, a light absorption layer disposed on the rear electrode, and a buffer layer disposed on the light absorption layer; a recombination layer including a first transparent conductive layer disposed on the buffer layer; a nanoparticle layer that is transparent and conductive, that is disposed on the first transparent conductive layer, and that planarizes the first solar cell; and a second transparent conductive layer disposed on the nanoparticle layer; and a second solar cell that is a perovskite solar cell including a perovskite layer and that is disposed on and bonded to the second transparent conductive layer of the recombination layer. The recombination layer electrically joins the first and second solar cells and planarizes the first solar cell so that the second solar cell is uniformly deposited in all regions thereof.
REACTIVE HEAT TREATMENT APPARATUS
A reactive heat treatment apparatus is provided to treat a thin-film device. The reactive heat treatment apparatus includes a furnace pipe. The furnace pipe extends in a direction and has a first end and a second end. The furnace pipe further includes a high-temperature portion, a low-temperature portion, and a furnace door. The high-temperature portion is disposed close to the second end and configured to receive the thin-film device. The low-temperature portion is disposed close to the first end and provided with an airtight configuration. The furnace door is disposed close to the first end. An inner side wall of the low-temperature portion has a sunken portion. A height differential is formed between the sunken portion and an inner side wall of the high-temperature portion.
Display Apparatus and Methods
A display includes a plurality of pixel chips, chixels, provided on a substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a seamless look between adjacent display modules. The substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.
Stainless steel substrate for solar cell having superior insulating properties and low thermal expansion coefficient and method of producing the same
Provided is a stainless steel substrate for a solar cell, the stainless steel substrate including, by mass %, Cr: 9% to 25%, C: 0.03% or less, Mn: 2% or less, P: 0.05% or less, S: 0.01% or less, N: 0.03% or less, Al: 0.005% to 5.0%, Si: 0.05% to 4.0%, and a remainder including Fe and unavoidable impurities, in which an oxide film containing (i) Al.sub.2O.sub.3 in an amount of 50% or more or containing (i) Al.sub.2O.sub.3 and (ii) SiO.sub.2 in a total amount of 50% or more is formed on a surface of stainless steel having a composition which contains Al: 0.5% or more and/or Si: 0.4% or more and satisfies the following expression (1).
Cr+10Si+Mn+Al>24.5 (1)
Lightweight unitary display
A lightweight display includes a plurality of display modules having a plurality of pixels carried by a display mounting frame. A support frame integral with the display mounting frame provides support. An electronic support member carries electrical components electrically communicating with the plurality of display modules for controlling the display of an image. Wherein the depth of the plurality of display modules, display mounting frame, support frame and electronic support member is less than four inches when defining a display assembly. Also wherein the display assembly has a screen size measured diagonally in a range of 114 inches to 224 inches and a weight in the range of 90 pounds to 120 pounds and wherein the display assembly has an aspect ratio ranging from 1.67 to 1.82.
SOLAR CELL COMPRISING A METAL-OXIDE BUFFER LAYER AND METHOD OF FABRICATION
A perovskite-based solar cell comprising a transparent electrode disposed on a buffer layer that protects the perovskite from damage during the deposition of the electrode is disclosed. The buffer material is deposited using either low-temperature atomic-layer deposition, chemical-vapor deposition, or pulsed chemical-vapor deposition. In some embodiments, the perovskite material is operative as an absorption layer in a multi-cell solar-cell structure. In some embodiments, the perovskite material is operative as an absorption layer in a single-junction solar cell structure.
Growth layer for photovoltaic applications
Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.
Photon and carrier management design for nonplanar thin-film copper indium gallium diselenide photovoltaics
Photovoltaic structures are disclosed. The structures can comprise randomly or periodically structured layers, a dielectric layer to reduce back diffusion of charge carriers, and a metallic layer to reflect photons back towards the absorbing semiconductor layers. This design can increase efficiency of photovoltaic structures. The structures can be fabricated by nanoimprint.
Glass laminated articles and layered articles
Laminated articles and layered articles, for example, low alkali glass laminated articles and layered articles useful for, for example, electrochromic devices are described.
Thin-film solar cell and production method for thin-film solar cell
A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV.sub.2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.