The present invention discloses a nanoparticle control and detection system and operating method thereof. The present invention controls and detects the nanoparticles in the same device. The device comprises a first transparent electrode, a photoconductive layer, a spacer which is deposed on the edge of the photoconductive layer and a second transparent electrode. The aforementioned device controls and detects the nanoparticles by applying AC/DC bias and AC/DC light source to the transparent electrode.

The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

A photodetector designing method includes, according to various requirements required by an application equipped with a photodetector including a photoelectric conversion layer having a superlattice structure mostly composed of amorphous selenium, a step of determining a form of the photodetector; a step of determining a type of a substrate suitable for a wavelength to be detected by the photoelectric conversion layer among the requirements, a step of calculating a multiplication factor M representing an amplification gain generated in a process of tunneling in the superlattice structure, and a step of determining, as a layer thickness of the photoelectric conversion layer, a thickness obtained by multiplying a thickness per one layer of the superlattice structure by the number of layers N.sub.SL of the superlattice structure on the assumption that the multiplication factor M is approximate to the number of layers N.sub.SL.

A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10.sup.−13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

The present invention relates to an apparatus for damping arid monitoring emissions from a light emitting device, particularly a vertical cavity surface emitting laser (VCSEL), comprising: a semi transparent substrate, preferably glass; a light emitting device for generating light emission; a damping layer deposited on a surface of the substrate; and a pair of electrodes, each of which being in direct contact with the damping layer. The damping layer is adapted to decrease the power level of the light emission of the light emitting device by absorption, to a desired level, for instance, to a level that meets eye safety limits. In addition, the damping layer is photosensitive to the light emission of the light emitting device, thereby allowing the pair of electrodes to output an electric signal corresponding to the power level of the light emission of the light emitting device.

The present invention relates to an optical sensor, a detector comprising the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical sensor and the detector. Furthermore, the invention relates to a human-machine interface, an entertainment device, a scanning system, a tracking system, a stereoscopic system, and a camera. The optical sensor (110) comprises a layer (112) of at least one photoconductive material (114), at least two individual electrical contacts (136, 136′) contacting the layer (112) of the photoconductive material (114), and a cover layer (116) deposited on the layer (112) of the photoconductive material (114), wherein the cover layer (116) is an amorphous layer comprising at least one metal-containing compound (120). The optical sensor (110) can be supplied as a non-bulky hermetic package which, nevertheless, provides a high degree of protection against possible degradation by humidity and/or oxygen. Moreover, the cover layer (116) is capable of activating the photoconductive material (114) which results in an increased performance of the optical sensor (110). Further, the optical sensor (110) may be easily manufactured and integrated on a circuit carrier device.

The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.

Described herein is a detector for detecting optical radiation, especially within the infrared spectral range, specifically with regard to sensing at least one of transmissivity, absorption, emission and reflectivity, being capable of avoiding or diminishing a cross detection between sensor areas, specifically between adjacent sensor areas, thus, avoiding or diminishing a deterioration of a measurement based on the at least one sensor signal.

An optical component packaging structure is provided. The optical component packaging structure includes a substrate, a far-infrared sensor chip, a metal covering cap and a light filter. The far-infrared sensor chip is disposed on the substrate and electrically connected to the substrate. The metal covering cap is disposed on the substrate and accommodating the far-infrared sensor chip. The metal covering cap has an opening exposing the far-infrared sensor chip. The light filter is disposed out of the opening and on the inner surface for covering the opening to filter the far-infrared light passing through. The far-infrared sensor chip is surrounded by the metal covering cap, the substrate and the light filter, and the metal covering cap is directly connected with the substrate.

A photodetector designing method includes, according to various requirements required by an application equipped with a photodetector including a photoelectric conversion layer having a superlattice structure mostly composed of amorphous selenium, a step of determining a form of the photodetector; a step of determining a type of a substrate suitable for a wavelength to be detected by the photoelectric conversion layer among the requirements, a step of calculating a multiplication factor M representing an amplification gain generated in a process of tunneling in the superlattice structure, and a step of determining, as a layer thickness of the photoelectric conversion layer, a thickness obtained by multiplying a thickness per one layer of the superlattice structure by the number of layers N.sub.SL of the superlattice structure on the assumption that the multiplication factor M is approximate to the number of layers N.sub.SL.