A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

Provided is an optical receptacle (140) having an installation plane (141), an optical plane, and a reference plane (147). An inclination angle of the reference plane (147) with respect to the installation plane (141) is smaller than an inclination angle of the optical plane with respect to the installation plane (141). Then, a first inclination angle θ1 that is the inclination angle of the reference plane (147) with respect to the installation plane (141) and a second inclination angle θ2 that is an inclination angle of the optical plane with respect to the reference plane (147) are measured. Then, the first inclination angle θ1 is added to the second inclination angle θ2 to calculate a third inclination angle θ3 that is the inclination angle of the optical plane with respect to the installation plane (141).

This invention is directed to methods for treating and preventing influenza infection by inhibiting influenza virus HA maturation processes employing compounds of formula I. It is also directed to combinations for treating and preventing influenza infection comprising compounds of formula I and other agents.

Provided is a display device including: a display panel; and a driving chip. The display panel includes: sub-pixels including first sub-pixels and second sub-pixels located, each first sub-pixel including a first pixel circuit and a first light-emitting element, and each second sub-pixel including a second light-emitting element. The driving chip includes: a data signal output module electrically connected to the first pixel circuit and configured to output a first data signal to the first pixel circuit, so that the first pixel circuit outputs, in response to the first data signal, a first driving current signal for driving the first light-emitting element to emit light; and a driving current signal output module electrically connected to the second light-emitting element and configured to output a second driving current signal to the second light-emitting element, so that the second light-emitting element emits light in response to the second driving current signal.

A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.

According to an embodiment, a self-powered sensor comprises at least one first layer emitting light in a preset wavelength band by receiving power from an outside, or receiving the emitted light reflected by an object, at least one second layer receiving light and generating a current, and a plurality of connectors each grown between two adjacent ones of the at least one first layer and the at least one second layer, the plurality of connectors transferring the generated current to the outside or transferring the power received from the outside to the at least one first layer and the at least one second layer.

The present technology relates to a light receiving device and a distance measurement system that enable light to be surely received by a reference pixel. A light receiving device includes a plurality of pixels each including a light receiving element having a light receiving surface, and a light emission source provided on an opposite side of the light receiving surface with respect to the light receiving element. The plurality of pixels includes a first pixel including a light shielding member provided between the light receiving element and the light emission source, and a second pixel including a light guiding unit that is configured to propagate a photon and is provided between the light receiving element and the light emission source. The present technology can be applied to a distance measurement system or the like that detects a distance to a subject in a depth direction, for example, for example.

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.

A signal coupling device includes a first element to output a signal, and a second element to receive the signal. A first silicone gel covers the first element. A second silicone gel covers the second element. A stacked body comprising at least one of an insulated coil or a capacitor is provided. The first element, the second element, and the stacked body are encapsulated in resin material, which contacts the first and second silicone gels.

An optical device includes a substrate, an electronic component and a lid. The electronic component is disposed on the substrate. The lid is disposed on the substrate. The lid has a first cavity over the electronic component and a second cavity over the first cavity. The sidewall of the second cavity is inclined.