Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) (14) made primarily of p-type ZnO fine particles (931) is formed. P-side electrodes (16) are formed at a plurality of regions on the p-type layer (14). A thin insulating layer (18) is formed between an n-type layer (13) and the p-type layer (14). In the insulating layer (18), openings are formed at regions A each not overlapping the p-side electrodes (16) and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes (16) apart from the regions A, the length of a current path in the p-type layer (14) can be made substantially larger than the layer thickness. Accordingly, even when n-type ZnO fine particles (932) are incorporated in the p-type layer (14), it is possible to interpose some of the p-type ZnO fine particles (931) along a leakage current path caused by the incorporation, and thereby cut off the current path.

A solid-state device, and use and formation thereof. The device includes a light emitter (102) that emits light with abeam propagation direction and includes an emitter epitaxial layer stack (940); a light routing medium (103) in optical communication with the light emitter; and a light detector (104) in optical communication with the light routing medium, which detects light emitted by the light emitter and includes a detector epitaxial stack (945). The light emitter and detector are monolithically formed on a semiconductor substrate. The emitter and detector epitaxial layer stacks include different pluralities of layers of a single epitaxial layer stack. The beam propagation direction is either in-plane with the single epitaxial layer stack and the light detector detects light out of plane with the single epitaxial layer stack, or out of plane with the single epitaxial layer stack and the light detector detects light in plane with the single epitaxial layer stack.

A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

A portable electronic device includes a foldable housing; a display; an illuminance sensor; a state detection sensor; a memory; and a processor. Based on data received from the state detection sensor, the portable electronic device is recognized to be in the folded state. Responsive to the portable electronic device being in a calibration trigger state which includes the folded state, a first image is displayed in a sensor area of a first display area located on the illuminance sensor, and a second image is displayed in an area of the second display area facing the sensor area. An illuminance value is calculated based on data received from the illuminance sensor while the first image and the second image are displayed, and then compared to a reference value stored in the memory to calculate a calibration value for calibrating measured illuminance values of the illuminance sensor.

An optical package structure includes a substrate, an emitter, a first detector and a light-absorption material. The substrate has a first surface and a second surface opposite to the first surface, the substrate includes a via defining a third surface extending from the first surface to the second surface. The emitter is disposed on the first surface of the substrate. The first detector is disposed on the first surface and aligned with the via of the substrate. The light-absorption material is disposed on the third surface of the substrate.

Various embodiments of a die carrier package and a method of forming such package are disclosed. The package includes one or more dies disposed within a cavity of a carrier substrate, where a first die contact of one or more of the dies is electrically connected to a first die pad disposed on a recessed surface of the cavity, and a second die contact of one or more of the dies is electrically connected to a second die pad also disposed on the recessed surface. The first and second die pads are electrically connected to first and second package contacts respectively. The first and second package contacts are disposed on a first major surface of the carrier substrate adjacent the cavity.

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

An energy harvesting electro-optic display is disclosed comprising a photovoltaic cell that converts part of the incident light to electric current or voltage, wherein the electric current or voltage is used for the operation of the electro-optic display upon the conversion or stored in a storage component to be used for the operation of the display.

An optoelectronic device including at least an emissive component including at least a first electrode, a second electrode, and an emissive element disposed between an emissive face of the optoelectronic device and the second electrode, a photodetector component such that the second electrode of the emissive component is disposed between the photodetector component and the emissive element. The emissive component and the photodetector component are superimposed one above the other, and the second electrode has at least one hole passing through it, disposed vertically in line with at least a part of a detection surface of the photodetector component and/or a part of the detection surface of the photodetector component is not disposed vertically in line with the second electrode and form a ring located at the external edges of the detection surface of the photodetector component.

Compound semiconductor and silicon-based structures are epitaxially formed on semiconductor substrates and transferred to a carrier substrate. The transferred structures can be used to form discrete photovoltaic and light-emitting devices on the carrier substrate. Silicon-containing layers grown on doped donor semiconductor substrates and compound semiconductor layers grown on off-cut semiconductor substrates form elements of the devices. The carrier substrates may be electrically insulating substrates or include electrically insulating layers to which photovoltaic and/or light-emitting structures are bonded.