Disclosed herein is radiation detector, comprising a first photodiode comprising a first junction; and a first scintillator, wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction. The first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction. The radiation detector further comprises a first reflector configured to guide essentially all photons emitted by the first scintillator into the first photodiode. The first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

A photosensor including first and second conductive layers disposed on a main surface and a back surface of a substrate is provided. A conductive via layer is disposed between the conductive layers. A light emitting element and an integrated circuit (IC) including a light receiving element are mounted on the first conductive layer. The photosensor includes a translucent covering member that covers the light emitting element and the IC together with the first conductive layer. The covering member includes a groove between the light emitting element and the IC in a plan view. The first conductive layer includes a first mounting portion on which the light emitting element is mounted and a second mounting portion on which the IC is mounted. The light emitting device is electrically connected to the IC via the first mounting portion, the conductive via layer, the second conductive layer and the second mounting portion.

A method of manufacturing a thin film transistor flat sensor that includes depositing a first metal film on a substrate and forming a common electrode on the substrate with one patterning process; successively depositing an insulating film and a second metal film on the substrate having the common electrode formed thereon, and forming a gate electrode by applying one pattering process to the second metal film; applying one patterning process to the deposited insulating film to form a common electrode insulating layer, wherein a first via hole is formed in the common electrode insulating layer at a location corresponding to the common electrode; depositing a transparent conductive film on the substrate having the common electrode, and forming a first conductive film layer, acting as one polar plate of a storage capacitor, on the common electrode and the gate electrode with one patterning process.

Provided herein is a large caliber terahertz wave generating device having a photonic crystal structure. The device includes a first electrode and a second electrode. The first electrode includes a first line pattern extending in a first direction, second line patterns coupled to the first line pattern and extending in a second direction, and third line patterns which are coupled to the first line pattern, extend in the second direction, are disposed between the second line patterns, and are longer than the second line patterns. The second electrode includes a fourth line pattern which extends in the first direction, fifth line patterns coupled to the fourth line pattern and extending in the second direction, and sixth line patterns which are coupled to the fourth line pattern, extend in the second direction, are disposed between the fifth line patterns, and are longer than the fifth line patterns.

Disclosed herein is radiation detector, comprising a first photodiode comprising a first junction; and a first scintillator, wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction. The first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction. The radiation detector further comprises a first reflector configured to guide essentially all photons emitted by the first scintillator into the first photodiode. The first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

Provided is a gas sensor that can suppress characteristic variation caused by deformation of a semiconductor substrate. The gas sensor (1) includes a substrate (redistribution layer 30), a light-emitting element (11) provided at a front surface (30a) or embedded in the substrate, a light-receiving element (12) that is provided at the front surface or embedded in the substrate and that receives light emitted from the light-emitting element, and a plurality of external connection terminals (40) at a rear surface (30b) that is an opposite surface to the front surface of the substrate. At least a portion of the plurality of external connection terminals is electrically connected to the light-emitting element and the light-receiving element. The plurality of external connection terminals is arranged such that, in plan view, the light-emitting element and the light-receiving element are not present on a line linking any two external connection terminals.

A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

The present disclosure provides a display panel, a display device and manufacturing method of the display panel. The display panel includes a display area and a peripheral area located at a periphery of the display area, a light transmittance region is provided in the peripheral region; at least one first sub-pixels is provided at positions corresponding to the light transmittance regions, wherein at least one of the first sub-pixels is provided with a first thin film transistor, the first thin film transistor is connected with the first gate line, the first data line, and the first pixel electrode, wherein the first gate line is floating; a first pixel electrode is disposed in at least one of the first sub-pixels; and at least one first sensing electrode has an orthogonal projection on a base substrate partially overlapped with an orthogonal projection of the at least one first sub-pixel.

A light receiving element (1) according to an embodiment of the disclosure includes a semiconductor layer (20) in which a photodiode having a PIN structure is provided in a mesa portion having a pillar shape. The photodiode includes a first conductive layer (21), an optical absorption layer (23), and a second conductive layer (24) having a light incident surface. In the light receiving element (1), the semiconductor layer (20) includes, in the vicinity of an interface between the first conductive layer (21) and the optical absorption layer (23), a constricted portion (26) that is the most constricted of the first conductive layer (21). The interface has an end exposed on an internal surface of the constricted portion (26).