Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2 μm; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.

Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2μm; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and a one-dimensional size of the top surface of the outermost first substructure is less than or equal to 45 μm; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer, the doped conductive layer includes a P-type doped conductive layer and an N-type doped conductive layer; and a second passivation layer located on a surface of the doped conductive layer.

Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride Si.sub.mN.sub.n material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiO.sub.iN.sub.j material, and a ratio of j/i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

A method of fabricating a non-uniformly curved photovoltaic module including multiple photovoltaic cells forming a body part of a vehicle and having differently curved areas. The method includes determining a minimum allowable bending radius of the photovoltaic cells, analysing a curvature radius of one of the photovoltaic cells being assumed to be arranged at a positioning area within the photovoltaic module, with the curvature radius being analyzed for each of multiple positioning areas along a lateral extension of the photovoltaic module, arranging the photovoltaic cells in a curvature limited configuration in which none of the photovoltaic cells overlaps a highly bended area, the curvature radius of which being analyzed to be smaller than the minimum allowable bending radius, and fixing the photovoltaic cells in the curvature limited configuration within the photovoltaic module, thereby preventing excessive bending and resulting breaking or cracking of photovoltaic cells.

Photovoltaic structures are provided with field-effect inversion/accumulation layers as emitter layers induced by work-function differences between gate conductor layers and substrates thereof. Localized contact regions are in electrical communication with the gate conductors of such structures for repelling minority carriers. Such localized contact regions may include doped crystalline or polycrystalline silicon regions between the gate conductor and silicon absorption layers. Fabrication of the structures can be conducted without alignment between metal contacts and the localized contact regions or high temperature processing.

A solar cell apparatus 100 and a method for forming said solar cell apparatus 100, comprising a substrate 101, a n-type transparent conductive oxide (TCO) layer 102 deposited atop said substrate 101, a p-i-n structure 200 that includes a p-type layer 103, an i-type layer 104, a n-type layer 105, a metal back layer 106 deposited atop said n-type layer 105 of the p-i-n structure 200. The n-type layer 105 comprises n-type donors 115 including phosphorus atoms. The n-type donors 115 include oxygen atoms at an atomic concentration comprised between 5% and 25% of the overall atomic composition of the n-type layer 105.