According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 μs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

Disclosed is a preparation method for crosslinked nanoparticle film. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.

A photovoltaic device is described, the device comprising a transparent conducting electrode layer; a back contact layer comprising at least one MXene material; and an active layer, comprising a photovoltaic active material, disposed between the transparent conducting electrode layer and the back contact layer. Also described is a method of producing a photovoltaic device, the method comprising the steps of providing substrate, depositing a transparent conducting electrode over the substrate; depositing an active layer comprising a photovoltaic material over the transparent conducting electrode; and depositing an MXene layer material over the active layer. A method of generating electricity using the disclosed device is also described.

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

The present disclosure provides a photodiode, a manufacturing method thereof, and a display screen. The photodiode includes: a first electrode including a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part includes a first end and a second end; a connecting part disposed on the first sub-part, the first end, and a substrate corresponding to a gap between the first sub-part and the second sub-part; and a light converting part and a second electrode disposed on the second end in sequence.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

A method of manufacturing a lead salt thin film on a substrate by seeding a substrate with a lead salt solution (e.g., PbSe, PbS, or PbTe) to form a seeded substrate comprising lead salt seed crystals, and growing the lead salt thin film upon the substrate by exposing the seeded substrate to a chemical bath comprising the lead salt solution at a predetermined growth temperature. A lead salt thin film manufactured by the process. A photonic crystal microchip comprising the lead salt thin film. A gas sensing device comprising a diode laser, a mid-infrared photodetector, and the photonic crystal microchip. A method of detecting a hydrocarbon gas, comprising exposing a gas sample to the gas sensing device, and determining the content of hydrocarbon gases in the gas sample.

Disclosed herein are methods for using cracked film lithography (CFL) for patterning transparent conductive metal grids. CFL can be vacuum- and Ag-free, and it forms more durable grids than nanowire approaches.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a PbS Mega-pixel-level array imaging system.