Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

The present invention relates to hybrid transparent conducting electrode comprising reduced graphene oxide film, metal mesh and textured glass, wherein the reduced graphene oxide film is coated on the textured glass embedded with the metal mesh or the reduced graphene oxide film is sandwiched between the textured glass and the metal mesh. The present invention also relates to a process of preparing the hybrid conducting transparent conducting electrode. The said transparent conducting electrode exhibits transparency ranging from about 70% to 85% with sheet resistance ranging from about 5 Ω/sq to 100 Ω/sq.

An apparatus comprising a substrate, one or more nanowire pillars, each having a base portion and a tip portion, a first electrode connected to the tip portions of the one or more nanowire pillars, an internal hollow cavity positioned between the substrate and the first electrode, such that at least a portion of each of the one or more nanowire pillars extend through the internal hollow cavity, and a second electrode proximate the first side of the substrate. High-performance broadband photodetectors and other optoelectronics for converting light to electricity with enhanced absorption and carrier collection.

A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

An integrated tandem solar cell includes a first solar cell including a rear electrode, a light absorption layer disposed on the rear electrode, and a buffer layer disposed on the light absorption layer; a recombination layer including a first transparent conductive layer disposed on the buffer layer; a nanoparticle layer that is transparent and conductive, that is disposed on the first transparent conductive layer, and that planarizes the first solar cell; and a second transparent conductive layer disposed on the nanoparticle layer; and a second solar cell that is a perovskite solar cell including a perovskite layer and that is disposed on and bonded to the second transparent conductive layer of the recombination layer. The recombination layer electrically joins the first and second solar cells and planarizes the first solar cell so that the second solar cell is uniformly deposited in all regions thereof.

A transparent photovoltaic device includes a transparent substrate, a transparent bottom electrode coupled to the transparent substrate, an active layer coupled to the transparent bottom electrode, and a transparent multilayer top electrode. The transparent multilayer top electrode includes a seed layer deposited on the active layer, a first metal layer deposited on the seed layer, an interconnect layer deposited on the first metal layer, and a second metal layer deposited on the interconnect layer. The transparent photovoltaic device is characterized by an average visible transmission (AVT) greater than 25% and a top electrode sheet resistance that is less than 100 Ohm/sq.

Disclosed are an array substrate and a preparation method thereof, and a digital microfluidic chip. The preparation method includes: forming a plurality of photoelectric detection devices on a silicon-based substrate; transferring the photoelectric detection devices to a base substrate by adopting a micro transfer printing process; and forming a plurality of transparent driving electrodes on the base substrate, wherein the transparent driving electrodes are insulated from the photoelectric detection devices.

Contacts for solar cells and other optoelectronic devices are provided. Embodiments described herein take advantage of the surface Fermi level pinning effect to build an electrical field inside of a semiconductor to extract or inject carriers for solar cells, photodetectors, and light-emitting device applications. For example, n-type or p-type two-dimensional (2D) materials can be used in contact with an n-type semiconductor to form a “p-region” so that a p-n junction, or an i-n or n-n+ junction can be constructed. Similarly, n-type or p-type 2D materials can be used in contact with a p-type semiconductor to form an “n-region” so that an n-p junction, or an i-p or p-p+ junction can be constructed. These structures can provide sufficiently high electrical field inside the semiconductor to extract photogenerated carriers in solar cells and photodetectors or inject minority carriers for light-emitting devices.

A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.