The present invention relates to a photo-charging energy storage device, and has been made in an effort to provide a photo-charging energy storage device which is capable of self-charging by combining a solar cell and a supercapacitor and used as a power source of an IoTs sensor.

The resulting photo-charging energy storage device according to the present invention includes: a solar cell; a conductive connector electrically connected to the solar cell, and combined with the solar cell; and a supercapacitor combined with the conductive connector, and charged with the solar cell via an electrical connection with the solar cell through the conductive connector.

Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.

Provided in one embodiment of the present invention is a solar cell upper electrode which is positioned on a photoactive layer and which includes a conductive polymer layer, wherein ionic liquid comes in contact with the surface of the conductive polymer layer so as to the post-treated, and, due to the post-treatment, an ion-exchange reaction occurs only in the upper area of the conductive upper electrode according to an embodiment of the present invention is not gelated so as to improve electrode performance, and does not oxidize a photoactive layer positioned under the electrode so as to be usable as an upper electrode, and thus can improve the performance of a solar cell to which the electrode is applied.

The present disclosure provides a method for rapidly treating a heterojunction solar cell fabricated using a crystalline silicon wafer doped exclusively with n-type dopants to improve surface passivation and carrier transport properties using the following steps: providing a heterojunction solar cell; the solar cell having an n-type silicon substrate exclusively doped with n-type dopants with a concentration higher than 1×10.sup.14 cm.sup.−3 and a plurality of metallic contacts; illuminating a surface portion of the solar cell for a period of less than 5 minutes and at a temperature between 200° C. and 300° C. with light having an intensity of at least 2 kW/m.sup.2 and a wavelength such that the light is absorbed by the surface portion and generates electron-hole pairs in the solar cell. The step of illuminating a surface portion of the solar cell is such that less than 0.5 kWh/m.sup.2 of energy is transferred to the surface portion and a temperature of the surface portion increases at a rate of at least 10° C./s for a period of time during illumination.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

Embodiments of a degradation phenomenon treatment method based on a photovoltaic module and a related device are disclosed. A high frequency signal is applied to the photovoltaic module when a degradation phenomenon occurs in the photovoltaic module to protect the photovoltaic module and suppress or eliminate the degradation phenomenon. The degradation phenomenon refers to degradation of electricity generation efficiency of the photovoltaic module under effect of an electric potential. Embodiments of the degradation phenomenon treatment method and the device resolve issues associated with a declined electrical energy conversion capability and decreased electricity generation efficiency of a photovoltaic module caused by a surface polarization phenomenon, a potential induced degradation (PID) phenomenon occurring in the photovoltaic module, or both.

This method for manufacturing a solar cell module comprises a step for applying an adhesive to a first adhesion region so that the first adhesion region and a second adhesion region are disposed alternately on a light receiving surface of a solar cell along a first direction, and a step for arranging a light receiving surface-side wiring material along the first direction on the light receiving surface side of the solar cell to which the adhesive has been applied. The step for arranging the light receiving surface-side wiring material comprises arranging the light receiving surface-side wiring material, in the first adhesion region and the second adhesion region of the solar cell so that, in a state in which a first holder is in contact with the holding region of the light receiving surface-side wiring material, the second adhesion region and the holding region overlap each other.

Devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance are disclosed herein. In particular, the methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiO.sub.x:H stacks achieved more than 41 mA/cm.sup.2 generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Further, solar cells and methods may include integration of ITO/SiO.sub.x:H stacks with Cu plating and use ITO/SiN.sub.x/SiO.sub.x triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.

Provided are a HJT cell having high photoelectric conversion efficiency and a method for preparing the same. The HJT cell includes an N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiO.sub.2 layer, a C-doped SiO.sub.2 layer, a doped N-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a front surface of the N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiO.sub.2 layer, a C-doped SiO.sub.2 layer, a doped P-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a back surface of the N-type crystalline silicon wafer. The doped P-type amorphous silicon layer includes a lightly B-doped amorphous silicon layer and a heavily B-doped amorphous silicon layer.

A solar cell includes a support substrate, a back electrode layer on the support substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, a high resistance buffer layer on the buffer layer, and a front electrode layer on the high resistance buffer layer. An insulating part is located on a top surface of the light absorbing layer. A method of fabricating the solar cell includes forming the back electrode layer on the substrate, forming the light absorbing layer on the back electrode layer, forming the buffer layer on the light absorbing layer, oxidizing a top surface of the buffer layer, and forming the front electrode layer on the buffer layer.