A light-emitting element includes, successively from a lower side to an upper side, a first n-side semiconductor layer, a first active layer, a first p-side semiconductor layer, a second n-side semiconductor layer, a second active layer, and a second p-side semiconductor layer, each made of a nitride semiconductor. The second n-side semiconductor layer contacts the first p-side semiconductor layer. The second n-side semiconductor layer includes, successively from a lower side to an upper side, a first layer including gallium, a second layer including aluminum and gallium, and a third layer including gallium and having a lower n-type impurity concentration than the first and second layers. A thickness of the first layer and a thickness of the second layer each is less than 50% of a thickness of the third layer.

A light-emitting element includes a first n-side semiconductor layer, a first active layer, a first p-side semiconductor layer, a second n-side semiconductor layer, a second active layer, and a second p-side semiconductor layer, each made of a nitride semiconductor. The second n-side semiconductor layer includes first to third layers. The first layer includes indium and gallium and has a first n-type impurity concentration. The second layer includes indium and gallium and has a second n-type impurity concentration less than the first n-type impurity concentration. A value of a composition ratio of indium in the second layer is less than a value of a composition ratio of indium in the first layer. A thickness of the second layer is greater than a thickness of the first layer. The third layer includes gallium and has a third n-type impurity concentration less than the second n-type impurity concentration.

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Discussed is a semiconductor light emitting device that can include a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, a first pad electrode electrically connected to the first conductivity type semiconductor layer, a second pad electrode electrically connected to the second conductivity type semiconductor layer, a first pattern structure disposed on the first pad electrode, and a second pattern structure disposed on the second pad electrode, wherein the first pattern structure comprises a first metal pattern structure disposed on the first pad electrode, a first adhesive material disposed on the first metal pattern structure, and a first conductive particle disposed in the first metal pattern structure.

In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.

A light-emitting diode (LED) die can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include vias that can electrically power the p-n junction. The vias can optionally be electrically connected in parallel to one another. A controller can supply current to the vias to electrically power the LED die. The vias can be distributed with a density that peaks at or near a center of the LED die and decreases with increasing distances away from the peak of the density, such that when the vias are electrically powered, the LED die emits light with a surface luminance that peaks at or near the center of the LED die and decreases with increasing distances away from the peak of the surface luminance.

Described herein are systems incorporating a Casimir cavity, such as an optical Casimir cavity or a plasmon Casimir cavity. The Casimir cavity modifies the zero-point energy density therein as compared to outside of the Casimir cavity. The Casimir cavities are paired in the disclosed systems with product generating devices and the difference in zero-point energy densities is used to directly drive the generation of products, such as chemical reaction products or emitted light.

An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.

A semiconductor device includes a semiconductor stack having a first-type semiconductor structure, an active structure, and a second-type semiconductor structure disposed on the first-type semiconductor structure. The second-type semiconductor structure has a doping concentration. A first portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and has a current confining region. A second portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and includes a first-type heavily doped region in the second-type semiconductor structure. The first-type heavily doped region includes a doping concentration higher than that of the second-type semiconductor structure.