A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.

A light-emitting device according to the present invention comprises, an electrode unit including a first electrode and a second electrode spaced apart from each other, with electrical signals having different polarity applying the first and second electrode, respectively; a first stimulation unit disposed on one surface of the electrode unit and having a first stimulation reaction layer expressing variable luminance according to a first stimulation; and a second stimulation unit disposed on the other surface facing the one surface of the electrode unit, and having a second stimulation reaction layer expressing a variable luminance according to a second stimulation different from the first stimulation.

A light emitting diode (LED) stack for a display including a first LED sub-unit configured to emit a first colored light, a second LED sub-unit disposed on the first LED sub-unit and configured to emit a second colored light, and a third LED sub-unit disposed on at least one of the first LED sub-unit and the second LED sub-unit and configured to emit a third colored light, in which the first LED sub-unit is configured to emit light through the second LED sub-unit and the third LED sub-unit, and the second LED sub-unit is configured to emit light through the third LED sub-unit.

A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel. The N-type electrode extends to the first extended electrode portion through the third channel and the P-type electrode extends to the second extended electrode portion through the fourth channel.

A light emitting diode (LED) pixel for a display including a first LED stack, a second LED stack disposed on a partial region of the first LED stack, a third LED stack disposed on a partial region of the second LED stack, a first ohmic electrode disposed on the first LED stack and forming ohmic contact with the first LED stack, a second transparent electrode disposed between the second LED stack and the third LED stack and in ohmic contact with an upper surface of the second LED stack, and a third transparent electrode in ohmic contact with an upper surface of the third LED stack, in which the first ohmic electrode is laterally spaced apart from the second LED stack.

A method for soldering electronic components includes providing a circuit substrate; providing a plurality of electronic components; placing the plurality of electronic components onto the circuit substrate; applying a conductor between the plurality of electronic components and the circuit substrate; providing an energy source which projects an energy beam with a first coverage; enlarging the energy beam and projecting the energy beam onto the circuit substrate with a second coverage; and melting the conductor within the second coverage via the energy beam and fixing the corresponding electronic components on the circuit substrate through the melted conductor. Besides, a method for manufacturing a LED display is disclosed.

A nitride semiconductor light-emitting element includes: a substrate; a rectangular semiconductor stack structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer stacked in sequence above a main surface of the substrate; a p-side contact electrode in contact with the p-type semiconductor layer in a p-side contact region; and an n-side contact electrode in contact with the n-type semiconductor layer in an n-side contact region. In a plan view of the main surface, the semiconductor stack structure includes a first corner portion, the n-side contact region includes a linear first region extending in one direction from a first starting point spaced apart from the first corner portion, the p-side contact region is disposed between the first starting point and the first corner portion where the distance therebetween is less than or equal to 0.26 times the length of a shorter side of the semiconductor stack structure.

An electronic element soldering method includes providing a substrate, wherein the substrate has a to-be-soldered position, placing an electronic device including an electronic element, a heating element, and a parallel-connected circuit on the to-be-soldered position of the substrate, adding a solder between the electronic element of the electronic device and the to-be-soldered position of the substrate, applying a heating current into the parallel-connected circuit of the electronic device to allow the heating element of the parallel-connected circuit to generate a thermal energy for melting the solder, thereby securing the electronic element on the to-be-soldered position of the substrate via the solder that is melted, applying a breaking current that is larger than the heating current into the parallel-connected circuit to allow an open to occur in a parallel branch corresponding to the heating element of the parallel-connected circuit, and stopping the breaking current.

In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension less than 5 um along a horizontal direction of the micro-LED, and a contact formed on a non-horizontal face of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs), and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that, when the micro-LED is driven at an effective current density less than 50 A/cm2, holes are injected from the contact to the plurality of QWs through the p-type semiconductor layer. The injected holes diffuse laterally in the plurality of QWs over a distance greater than 1 micrometer (μm).

Epitaxial growth methods and devices are described that include a textured surface on a substrate in a liquid crystal device. Geometry of the textured surface provides a organization of a liquid crystal media.