Provided is a photonic device in which emission intensity in a short wavelength region is suppressed even in the case of increasing carrier injection density so as to obtain a wide spectrum half-maximum width as well as a high output. The photonic device includes: a first cladding layer; a second cladding layer; and an active layer including an emitting layer and a barrier layer and being provided between the first cladding layer and the second cladding layer, the emitting layer emitting light in a spectrum having a center wavelength λc and a spectrum half-maximum width Δλ, in which at least one of the first cladding layer and the second cladding layer includes a light absorbing part for absorbing light having a wavelength of λs or less represented by the following Expression (1):
λs<(λc−(Δλ/2))  (1).

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

An array of surface-emitting gain chips includes a common substrate, plural gain chips formed on the common substrate, each configured to generate a light beam, plural optical couplers, each located on a top surface of a corresponding gain chip of the plural gain chips, plural optical fibers, each connected with one end to a corresponding optical coupler of the plurality of optical couplers, an array wide optical coupler connected to another end of the plural optical fibers, and a single optical fiber connected to the array wide optical coupler and configured to output the combined light beams.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.

The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor layer sequence having at least two active regions which generate electromagnetic radiation during operation and at least one reflective outer surface which is arranged to the side of each active region wherein the reflective outer surface includes an angle of at least 35° and at most 55° with a main extension plane of the semiconductor chip. The invention also relates to a method for producing a radiation-emitting semiconductor chip.

A sealing material composition for LED has excellent heat-resistant transparency, adhesion, and crack resistance, and low sulfur gas permeability. A sealing material composition for LED has the following (A), (B), (C), and (D):

(A): polysiloxane containing units (1-1), (1-2), and (1-3):

##STR00001##

wherein R.sup.1 is C.sub.1-12 alkyl or C.sub.6-20 aryl, R.sup.2 is hydrogen, C.sub.1-12 alkyl, or Si constituting main chain of polysiloxane as (A); (B): polysiloxane containing units (2-1), (2-2), and (2-3):

##STR00002##

wherein R.sup.3 and R.sup.4 are each hydrogen, C.sub.1-12 alkyl, or Si constituting main chain of polysiloxane as (B); (C): adhesive; and (D): condensation catalyst for silanol group.

A wavelength conversion member, comprises: a substrate; a first wavelength conversion layer on the substrate, the first wavelength conversion layer containing a first phosphor and a first matrix; and a second wavelength conversion layer containing a second phosphor, first inorganic particles, and a second matrix. The first phosphor and the second phosphor convert at least part of the excitation light incident on the second main surface into first light having longer wavelengths than the excitation light. The first light is emitted from the second main surface of the second wavelength conversion layer. A volume Vp1 of the first phosphor, a volume Vw1 of the first wavelength conversion layer, a volume Vp2 of the second phosphor, and a volume Vw2 of the second wavelength conversion layer satisfy Vp1/Vw1>Vp2/Vw2.

Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.