A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 μm, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

The present application provides an epitaxial wafer of a red light-emitting diode, and a preparation method therefor, by designing an n-type semiconductor layer as a gradient layer with the content of an aluminum element gradually increasing along a growth direction of the epitaxial wafer and the content of an indium element gradually decreasing along a stacking direction of the epitaxial wafer, and a constant layer with the content of an aluminum element and an indium element not changing along the growth direction of the epitaxial wafer, the potential barrier at the side close to a multi-quantum well layer gradually rises, preventing electrons and holes in the multi-well quantum layer for radiative recombination from moving to the outside of the MQW region, confining the holes and electrons to have a radiative recombination in the MQW and reducing non-radiative recombination, and also facilitating the flowing of electrons in the n-layer to the MQW region.

A method of manufacturing an optoelectronic device, including the steps of: a) providing an active diode stack comprising a first doped semiconductor layer of a first conductivity type and a second doped semiconductor layer of the first conductivity type, coating the upper surface of the first layer; b) arranging a third semiconductor layer on the upper surface of the active stack; c) after step b), forming at least one MOS transistor inside and on top of the third semiconductor layer; and d) after step b), before or after step c), forming trenches vertically extending from the upper surface of the third layer and emerging into or onto the upper surface of the first layer and delimiting a plurality of pixels, each including a diode and an elementary diode control cell.

Disclosed are an optoelectronic device and a preparation method thereof. The optoelectronic device includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The conductivity type of the first semiconductor layer is opposite to that of the second semiconductor layer, and the second semiconductor layer is provided with a layer of nano-diamond structure, and the nano-diamond structure has the same conductivity type as the second semiconductor layer. The method for preparing the optoelectronic device is used to make the optoelectronic device. In the present application, by providing a layer of nano-diamond structure in the second semiconductor layer, the absorption of UV light emitted by the active layer can be effectively avoided, and the beneficial effect of greatly improving the light extraction efficiency of the UV LED can be achieved.

A multilayer light emitting device having a plurality of low Si—H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.

A method for manufacturing a semiconductor element according to the present disclosure includes an element layer forming step of forming a semiconductor element layer on a first surface of a ground substrate; a first supporting substrate preparing step of positioning a first supporting substrate that has a third surface and has a bonding material located on the third surface so that the third surface faces the first surface; a pressing step of causing the bonding material to enter a gap between the ground substrate and the semiconductor element layer; and a peeling step of peeling off the first supporting substrate, the bonding material, and the semiconductor element layer from the ground substrate.

To improve light emission efficiency, in a light-emitting element including a first InAs layer that is undoped or doped with an n-type dopant; an active layer including one or more InAs.sub.ySb.sub.1-y layers (0<y<1); and a second InAs layer doped with a p-type dopant, an Al.sub.xIn.sub.1-xAs electron blocking layer (0.05≤x≤0.40) with a thickness of 5 nm to 40 nm is provided between the active layer and the second InAs layer.

A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.

In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z with x≥0.5, and wherein the quantum well layers are grown in A) from [(Al.sub.aGa.sub.1-a).sub.bIn.sub.1-b].sub.cP.sub.1-c with o<a≤0.2.

A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern.