This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

A display device according to an example embodiment of the present disclosure includes a first substrate including an active area including a plurality of pixels and a non-active area surrounding the active area; a plurality of LEDs disposed in the plurality of pixels on the first substrate; a planarization layer disposed to surround the plurality of LEDs; a bank disposed on the planarization layer and including a black material; a reflection-reducing layer disposed on the bank and having a reflectance varying according to temperature; and a heat dissipation layer disposed on the reflection-reducing layer.

Provided is a core-shell type light-emitting quantum dot, including an alloy type core consisting of Cd, Se, Zn, and S, and a shell layer having a zinc blende structure and being coated on the surface of the alloy core, wherein the element ratio of each of Zn and S accounts for 30 to 50% of the overall core, and the content of Cd and Se gradually decreases outward from the core center. Also provided is a method for preparing the core-shell type light-emitting quantum dot. By having the alloy core and the shell layer with a zinc blende structure, the core-shell type quantum dot can achieve quantum efficiency of 95%, and have high temperature resistance and excellent water- and oxygen-barrier performance.

The present invention discloses a bidirectional ultraviolet light emitting diode (UV LED) based on N—ZnO/N—GaN/N—ZnO heterojunction as well as its preparation method. The LED includes: N—ZnO microwires, a N—GaN film, a PMMA protective layer and alloy electrodes; and its preparation method includes the following steps: lay two N—ZnO microwires on the N—GaN film, then spin-coat a PMMA protective layer on the film to fix the N—ZnO microwires until the PMMA protective layer spreads over the N—ZnO microwires, and then place the film on a drying table to solidify the PMMA protective layer; then etch the PMMA protective layer with O.sub.2 to expose the N—ZnO microwires, and prepare alloy electrodes on different N—ZnO microwires to construct a N—ZnO/N—GaN/N—ZnO heterojunction to constitute a complete device. The present invention constructs an N/N/N symmetrical structure; the device is composed of N—ZnO and N—GaN, emits light in the ultraviolet region and has a small turn-on voltage.

The present disclosure relates to the field of dielectric elastomers. In particular, provided are a dielectric elastomer precursor fluid, a preparation method therefor and the use thereof, a dielectric elastomer composite material, a flexible device, and a light-emitting device. The dielectric elastomer precursor fluid comprises an elastomer matrix, an ionic liquid and a solvent, wherein the volume fraction of the ionic liquid and the solvent is 5-45%. The dielectric elastomer precursor fluid has the advantages of a high conductivity, a high transparency and a good fluidity, and is beneficial for preparing a dielectric elastomer composite material having a high dielectric constant, a low elastic modulus and a high optical transparency, thus fully solving the problem that a high dielectric constant cannot be balanced with a low elastic modulus and a high optical transparency in a dielectric elastomer.

The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WYxZ(1-x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0<X<1, comprising dissolving a Group II element, a first Group VI element, and a second Group VI element in a one or more solvents. The Group II, VI and VI elements are combined to provide a II:VI:VI SCN precursor solution, which is heated to a temperature sufficient to produce semiconductor nanocrystals of the formula WYxZ(1-x). The solvent used to dissolve the Group II element comprises octadecene and a fatty acid. The solvent used to dissolve the Group VI elements comprises octadecene. The invention also includes semiconductor nanocrystals prepared according to the disclosed methods, as well as methods of using the semiconductor nanocrystals.

The present disclosure relates to the field of dielectric elastomers. In particular, provided are a dielectric elastomer precursor fluid, a preparation method therefor and the use thereof, a dielectric elastomer composite material, a flexible device, and a light-emitting device. The dielectric elastomer precursor fluid comprises an elastomer matrix, an ionic liquid and a solvent, wherein the volume fraction of the ionic liquid and the solvent is 5-45%. The dielectric elastomer precursor fluid has the advantages of a high conductivity, a high transparency and a good fluidity, and is beneficial for preparing a dielectric elastomer composite material having a high dielectric constant, a low elastic modulus and a high optical transparency, thus fully solving the problem that a high dielectric constant cannot be balanced with a low elastic modulus and a high optical transparency in a dielectric elastomer.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of the substrate. The system includes a heater configured to heat the substrate and a positioning mechanism that allows dynamic adjusting of an orthogonal distance, a lateral distance, and a tilt angle of an exit aperture of a material source relative to the substrate. In some embodiments, the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate. In some embodiments, the orthogonal distance, the lateral distance, or the tilt angle depends on a predetermined material ejection spatial distribution of the material source.

An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of the substrate. The system includes a heater configured to heat the substrate and a positioning mechanism that allows dynamic adjusting of an orthogonal distance, a lateral distance, and a tilt angle of an exit aperture of a material source relative to the substrate. In some embodiments, the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate. In some embodiments, the orthogonal distance, the lateral distance, or the tilt angle depends on a predetermined material ejection spatial distribution of the material source.