A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometers and 250 nanometers, inclusive, applying the wafer (1) to a film (11), at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.

A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): ##STR00001##
wherein, in Formula (A), X.sup.1 represents SH, NH.sub.2, or OH; and each of A.sup.1 and B.sup.1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A.sup.1 and B.sup.1 are both hydrogen atoms, X.sup.1 represents SH or OH; in Formula (B), X.sup.2 represents SH, NH.sub.2, or OH; and each of A.sup.2 and B.sup.2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), A.sup.3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.