Enhanced probe cards, for testing unpackaged semiconductor die including numerous discrete devices (e.g., LEDs), are described. The die includes anodes and cathodes for the LEDs. Via a single touchdown event, the probe card may simultaneously operate each of the LEDs. The LEDs' optical output is measured and the performance of the die is characterized. The probe card includes a conductive first contact and another contact that are fabricated from a conformal sheet or film. Upon the touchdown event, the first contact makes contact with each of the die's anodes and the other contact makes contact with each of the die's cathodes. The vertical and sheet resistance of the contacts are sufficient such that the voltage drop across the vertical dimension of the contacts is approximately an order of magnitude greater than the operating voltage of the LEDs and current-sharing between adjacent LEDs is limited by the sheet resistance.

Enhanced probe cards, for testing unpackaged semiconductor die including numerous discrete devices (e.g., LEDs), are described. The die includes anodes and cathodes for the LEDs. Via a single touchdown event, the probe card may simultaneously operate each of the LEDs. The LEDs' optical output is measured and the performance of the die is characterized. The probe card includes a conductive first contact and another contact that are fabricated from a conformal sheet or film. Upon the touchdown event, the first contact makes contact with each of the die's anodes and the other contact makes contact with each of the die's cathodes. The vertical and sheet resistance of the contacts are sufficient such that the voltage drop across the vertical dimension of the contacts is approximately an order of magnitude greater than the operating voltage of the LEDs and current-sharing between adjacent LEDs is limited by the sheet resistance.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.

A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.

A display device includes a first switching element including a second electrode and a first gate electrode, a second switching element including a third electrode connected with the first gate electrode, a third switching element including a fifth electrode connected with the second electrode, and sixth electrode, a fourth switching element including a seventh electrode connected with the second electrode, and an eighth electrode, a fifth switching element including a ninth electrode connected with the second electrode, and a tenth electrode, a first light emitting diode connected with the sixth electrode and the eighth electrode, a second light emitting diode connected with the eighth electrode and the sixth electrode, and a switch selectively connecting a common power source line with the sixth electrode or the eighth electrode. The first light emitting diode and the second light emitting diode have different polarities from each other with respect to a same direction.

A light-emitting device includes a substrate comprising a base member, a first wiring, a second wiring, and a via hole; at least one light-emitting element electrically connected to and disposed on the first wiring; and a covering member having light reflectivity and covering a lateral surface of the light-emitting element and a front surface of the substrate. The base member defines a plurality of depressed portions separated from the via hole in a front view and opening on a back surface and a bottom surface of the base member. The substrate includes a third wiring covering at least one of inner walls of the plurality of depressed portions and electrically connected to the second wiring. A depth of each of the plurality of depressed portions defined from the back surface toward the front surface is larger on a bottom surface side than on an upper surface side of the base member.

A light-emitting device includes a substrate comprising a base member, a first wiring, a second wiring, and a via hole; at least one light-emitting element electrically connected to and disposed on the first wiring; and a covering member having light reflectivity and covering a lateral surface of the light-emitting element and a front surface of the substrate. The base member defines a plurality of depressed portions separated from the via hole in a front view and opening on a back surface and a bottom surface of the base member. The substrate includes a third wiring covering at least one of inner walls of the plurality of depressed portions and electrically connected to the second wiring. A depth of each of the plurality of depressed portions defined from the back surface toward the front surface is larger on a bottom surface side than on an upper surface side of the base member.

A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.