Provided is a light emitting device that is bright in both scotopic vision and photopic vision, and has reduced glare for humans.

The light emitting device includes a light emitting element having a dominant wavelength in a range of 430 nm or more and 500 nm or less, and a fluorescent material that is excited by light emitted from the light emitting element and has a light emission peak wavelength in a range of 507 nm or more and 660 nm or less, wherein the light emitting device emits light having a dominant wavelength in a range of 490 nm or more and 500 nm or less, wherein the light emitting device has an S/P ratio, which is the ratio of a luminous flux in photopic vision to a luminous flux in scotopic vision, being 6.5 or less, and wherein the light emitting device has a light emission intensity in the light emission peak wavelength of the light emitting element that is greater than that in the light emission peak wavelength of the fluorescent material.

A black matrix substrate assembly including a transparent substrate, a black matrix pattern, a transparent resin layer, a resin wall pattern, a light reflective layer, and a transparent protective layer. The black matrix pattern includes first and second black linear segments with a width Ax of each first segment in a first direction. The resin wall pattern includes first and second wall linear segments with a width Dx of each first segment smaller than the width Ax in the first direction and the center line of each first segment aligned with that of the corresponding first black linear segment. The light reflective layer includes first and second reflective linear segments with a width Cx of each first segment larger than the width Dx in the first direction and the center line of each first segment aligned with that of the corresponding first black linear segment.

A light emitting diode package includes: a housing including a cavity region therein; a light emitting diode chip mounted in the cavity region of the housing; and a resin part formed in the cavity region to cover a light emitting surface of the light emitting diode chip. The housing includes a first surface and a second surface perpendicular to a width direction of the housing and spaced apart from each other, and a third surface and a fourth surface perpendicular a longitudinal direction of the housing and spaced apart from each other, in which the first surface and the second surface surround the resin part while the third surface and the fourth surface expose side surfaces of the resin part.

An object is to provide a new type of near-infrared ray-emitting phosphor which exhibits excellent emission intensity. A near-infrared ray-emitting phosphor is represented by a general formula, (Y, Lu, Gd).sub.3-x-y (Ga,Al,Sc).sub.5O.sub.12:(Cr.sub.x,(Yb,Nd).sub.y) (0.05<x<0.3, 0≤y<0.3).

A color conversion film is provided. The film includes at least one narrow band emission phosphor dispersed within a binder matrix, wherein the narrow band emission phosphor has a D50 particle size from about 0.1 μm to about 15 μm and is selected from the group consisting of a green-emitting U.sup.6+-containing phosphor, a green-emitting Mn.sup.2+-containing phosphor, a red-emitting phosphor based on complex fluoride materials activated by Mn.sup.4+, and a mixture thereof. A device is also provided.

A display device including a display area and a non-display area, an inorganic insulating layer disposed on a substrate, the inorganic insulating layer disposed in the display area and the non-display area, pixels disposed on the substrate and overlapping the inorganic insulating layer in a plan view, the pixels disposed in the display area, and an organic insulating layer disposed on the substrate and overlapping the inorganic insulating layer and the pixels in a plan view, the organic insulating layer disposed at least in the display area. The non-display area includes an organic layer-free area including at least one of a corner and an outer edge area of the display device. The organic insulating layer is disposed on a portion of the substrate so as to be disposed in an area except for the organic layer-free area.

Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

Solid-state lighting devices and more particularly light-emitting devices for horticulture applications are disclosed. Light-emitting devices are disclosed with aggregate emissions that target chlorophyll absorption peaks while also providing certain broader spectrum emissions between the chlorophyll absorption peaks. The aggregate emissions may be provided by light-emitting diodes (LEDs) that emit wavelengths that correspond with certain chlorophyll absorption peaks and lumiphoric materials that provide broader spectrum emissions. The aggregate emissions are configured to have reduced emissions from lumiphoric materials in ranges close to certain chlorophyll absorption peaks, such as above 600 nanometers (nm). In this regard, light-emitting devices according to the present disclosure provide the ability to efficiently target specific chlorophyll absorption peaks for plant growth while also providing suitable lighting for occupants in a horticulture environment.

Quantum dot polymer composites for on-chip light emitting diode applications are described. In an example, a composite for on-chip light emitting diode application includes a polymer matrix, a plurality of quantum dots dispersed in the polymer matrix, and a base dispersed in the polymer matrix.

To provide a quantum dot and manufacturing method of the dot particularly capable of reducing organic residues adhering to the quantum dot surface and of suppressing the black discoloration occurrence of a layer including the quantum dot positioned immediately above a light emitting device, and a compact, sheet member, wavelength conversion member and light emitting apparatus with high luminous efficiency using the quantum dot, a quantum dot of the present invention has a core portion including a semiconductor particle, and a shell portion with which the surface of the core portion is coated, and is characterized in that a weight reduction up to 490° C. is within 75% in a TG-DTA profile. Further, the quantum dot of the invention is characterized in that oleylamine (OLA) is not observed in GC-MS qualitative analysis at 350° C.