A device including a phosphor layer having a plurality of holes or pockets arranged within the phosphor layer to reduce lateral light transmission. The phosphor layer can be sized and positioned to extend over a plurality of LED emitter pixels.

Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

A color display device includes a matrix of light sources, each light source comprising a single micro-light-emitting diode, the light sources being of three different colors, each color pixel of the matrix comprising three sources emitting in the three different colors. In the device, the matrix is formed by a group of elementary components of identical shape, each elementary component comprising at least two light-emitting diodes emitting in one of the three spectral bands—the shape of the light-emitting diodes being either a triangle, or a quadrilateral, or a pentagon—the elementary components being assembled in threes such that their respective diodes touch one another by one of their sides, the group formed by the three sources associated with the three diodes forming a color pixel.

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

The present disclosure provides a LED package structure and a LED light-emitting device. The LED package structure comprises a LED chip and a wavelength converting layer covering the LED chip. The wavelength converting layer contains red phosphor, which has lower amount in edge portion than in center portion. It is possible to avoid direct or indirect excitation for generating red light in edge portion of the LED chip by adjusting the amount of red phosphor in edge portion to be lower, so that the color temperature in edge portion may be adjusted toward to high color temperature, and thus the phenomenon of yellow halo may be alleviated.

A light emitting device has a substrate, a plurality of light emitting elements mounted on the substrate, a first wavelength conversion members disposed so as to cover at least a portion of the upper surface of at least two light emitting elements of the plurality of light emitting elements, a sealing material sealing the plurality of light emitting elements and the first wavelength conversion members, and a transparent layer formed of a material different from the sealing material and is disposed between the substrate, the plurality of light emitting elements and the first wavelength conversion members, and the sealing material, wherein at least one side of each of the plurality of light emitting elements is disposed so as to face a side surface of the other light emitting element of the at least two light emitting elements, and not cover at least a portion of the non-facing side surfaces thereof.

A white light emitting device may include a substrate, first LEDs disposed on the substrate, a first photoluminescence material disposed over the first LEDs, second LEDs disposed on the substrate, where the first LEDs and the second LEDs emit blue light at substantially the same wavelength, a second photoluminescence material disposed over the second LEDs, the second photoluminescence material having a composition different from the first photoluminescence material, where an emission product of the white light emitting device is a combination of light emitted from (i) a combination of the first LEDs and the first photoluminescence material, and (ii) a combination of the second LEDs and the second photoluminescence material, and a dimming control connected to the first LEDs and to the second LEDs; where the dimming control is actuable to modify the emission product.

Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly binder materials for light-emitting devices are disclosed. A lumiphoric material for a light-emitting device may include lumiphoric particles embedded within a binder material. The lumiphoric material may be formed according to sol-gel chemistry techniques where a solution of binder precursors and lumiphoric particles is applied to a surface, dried to reduce liquid phase, and fired to form a hardened and dense lumiphoric material. The binder precursors may include metal oxide precursors that result in a metal oxide binder. In this manner, the lumiphoric material may have high thermal conductivity while also being adaptable for liquid-phase processing. In further embodiments, binder materials with or without lumiphoric particles may be utilized in place of conventional encapsulation materials for light-emitting devices.

An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.