Patent classifications
H01L33/58
DISPLAY DEVICE
A display device includes a partition wall on a substrate, a plurality of light emitting elements respectively located on a plurality of emission areas defined by the partition wall, the plurality of light emitting elements extend in a thickness direction of the substrate, a base resin located in the plurality of emission areas, and a plurality of optical patterns located on at least one of the plurality of emission areas, wherein the plurality of emission areas are arranged in a RGBG matrix pattern by the partition wall.
DISPLAY DEVICE
A display device includes a partition wall on a substrate, a plurality of light emitting elements respectively located on a plurality of emission areas defined by the partition wall, the plurality of light emitting elements extend in a thickness direction of the substrate, a base resin located in the plurality of emission areas, and a plurality of optical patterns located on at least one of the plurality of emission areas, wherein the plurality of emission areas are arranged in a RGBG matrix pattern by the partition wall.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
The disclosure provides a display device and a manufacturing method thereof. The display device includes a substrate, a spacer layer, a light emitting element, and an optical layer. The spacer layer is disposed on the substrate and includes openings. The light emitting element and the optical layer are disposed in the opening.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
The disclosure provides a display device and a manufacturing method thereof. The display device includes a substrate, a spacer layer, a light emitting element, and an optical layer. The spacer layer is disposed on the substrate and includes openings. The light emitting element and the optical layer are disposed in the opening.
DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY APPARATUS
A display panel includes a display module and a lens layer. The display module has a display region and includes a plurality of pixel units disposed in the display region and distributed in an array, each pixel unit is configured to emit light. The lens layer is disposed on a display side of the display module. Light emitted by the plurality pixel units passes through the lens layer to form a display image, and the display image includes a plurality of pixels distributed in an array. The number of pixel units included in a row of pixel units in a first direction is less than the number of pixels included in a row of pixels in the first direction. A first pixel distance is smaller than a first pixel unit distance.
DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY APPARATUS
A display panel includes a display module and a lens layer. The display module has a display region and includes a plurality of pixel units disposed in the display region and distributed in an array, each pixel unit is configured to emit light. The lens layer is disposed on a display side of the display module. Light emitted by the plurality pixel units passes through the lens layer to form a display image, and the display image includes a plurality of pixels distributed in an array. The number of pixel units included in a row of pixel units in a first direction is less than the number of pixels included in a row of pixels in the first direction. A first pixel distance is smaller than a first pixel unit distance.
Optical Component, Optoelectronic Semiconductor Component and Method for Producing an Optical Component
In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 μm and 200 μm inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO.sub.3/2 units.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A display device includes pixel electrodes disposed on a substrate, at least one light-emitting element disposed on each of the pixel electrodes, a planarization layer disposed on the pixel electrodes and filling a space between the at least one light-emitting element, and a common electrode disposed on the planarization layer and the at least one light-emitting element. Each of the light-emitting elements is arranged perpendicular to a top face of each of the pixel electrodes, at least one of the pixel electrodes includes a protrusion protruding toward an adjacent one of the pixel electrodes, and the protrusion overlaps the light-emitting element in a plan view.
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH NEAR-FIELD QUASI-GUIDED-MODE REFLECTOR
A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH NEAR-FIELD QUASI-GUIDED-MODE REFLECTOR
A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.