A catheter has a cooling distal section for freezing tissue to sub-zero temperatures with one or more miniature reverse thermoelectric or Peltier elements, also referred to herein as micro-Peltier cooling (MPC) units or electrodes. The MPC units may be on outer surface of an inflatable or balloon member or a tip electrode shell wall that has a fluid-containing interior cavity acting as a heat sink. Each MPC unit has a hot junction and a cold junction whose temperatures are regulated by the heat sink, and a voltage/current applied to the MPC units. A temperature differential of about 70 degrees Celsius may be achieved between the hot and cold junctions for extreme cooling, especially where the MPC units include semiconductor materials with high Peltier co-efficients. An outer coating of thermally-conductive but electrically-insulative material seals the MPC units to prevent unintended current paths through the MPC units.

A sensing system including in-ground sensors not requiring battery power. A thermoelectric generator sensor rod includes an upper thermal contact and a lower thermal contact at or near its two ends. When the thermoelectric generator sensor rod is buried in the ground with one end buried more deeply than the other, a temperature gradient in the soil produces a temperature difference between the upper thermal contact and the lower thermal contact. The upper thermal contact and the lower thermal contact are thermally connected to a thermoelectric generator, e.g., by heat pipes or thermally conductive rods. Electrical power generated by the thermoelectric generator powers sensors for monitoring conditions in the ground, and circuitry for transmitting sensor data to a central data processing system.

Systems, apparatuses, and methods are provided for scalable manufacturing of thermoelectric device modules for multiple uses on a single substrate. An example method can include disposing thermoelectric structures on a substrate, the substrate having a first substrate material, and the thermoelectric structures having a thermoelectric material disposed on a second substrate material. The example method can further include removing the second substrate material from each of the thermoelectric structures. The example method can further include forming electrical contacts on a top surface of each respective one of the thermoelectric structures. The example method can further include forming top headers over subsets of the electrical contacts. The example method can further include forming thermoelectric device modules, each of the thermoelectric device modules having at least a pair of the thermoelectric structures and at least one of the top headers.

A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by A.sub.x-cB.sub.y with value of x being smaller by c with respect to a compound A.sub.xB.sub.y according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

To provide a thermoelectric conversion material having low environmental load and an excellent thermoelectric figure of merit ZT and a thermoelectric conversion module including the thermoelectric conversion material. A thermoelectric conversion material of the present invention is characterized by being a compound represented by Chemical Formula (1).
Cu.sub.26-xM.sub.xA.sub.2E.sub.6-yS.sub.32  (1)
In Chemical Formula (1), M represents a metal material including at least one of Mn, Fe, Co, Ni, and Zn; A represents a metal material including at least one of Nb and Ta; E represents a metal material including at least one of Si, Ge, and Sn; x represents a numerical value of 0 or more and 4 or less; and y represents a numerical value of more than 0 and 1 or less.

The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

A thermoelectric fabric may include a plurality of first threads and second threads. The first threads may be alternately formed by p-doped and n-doped thread portions and electrically conductive first thread portions and second thread portions arranged in between. The first thread portions may form a hot side of the fabric, and the second thread portions may form a cold side. The first threads may form one of warp threads or weft threads of the fabric, and the second threads may form the other of the warp threads or weft threads. On at least one of the first thread portions of at least one of the plurality of first threads, a temperature control structure with at least one temperature control element for cooling the hot side may be present.

Proposed are an organic-inorganic composite thermoelectric material and a preparation method thereof. The organic-inorganic composite thermoelectric material includes an organic matrix and an inorganic thermoelectric portion dispersed in the organic matrix and including a nanomaterial. The organic matrix includes an organic conductor, and the nanomaterial includes at least one selected from the group consisting of a chalcogen element and a chalcogenide. The organic-inorganic composite thermoelectric material of the present invention has advantages of low cost and excellent thermoelectric properties through complexation of an aligned inorganic thermoelectric material and an organic thermoelectric material.

The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.

One embodiment discloses a thermoelectric element comprising: a first substrate; a plurality of thermoelectric legs disposed on the first substrate; a second substrate disposed on the plurality of thermoelectric legs above the first substrate; electrodes including a plurality of first electrodes disposed between the first substrate and the plurality of thermoelectric legs and a plurality of second electrodes disposed between the second substrate and the plurality of thermoelectric legs; and a first reinforcing part disposed on the lower surface and a portion of the side surface of the first substrate.