An electrical converter and heater module with heat insulators having different cross-sectional areas includes a thermoelectric conversion module that corrects the difference in thermal resistance between a P-type thermoelectric conversion member and an N-type thermoelectric conversion member. In this thermoelectric conversion module, since insulators included in the P-type thermoelectric conversion member and the N-type thermoelectric conversion member have a different thermal resistance, it is possible to correct the difference in thermal resistance between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element.

A catheter has a cooling distal section for freezing tissue to sub-zero temperatures with one or more miniature reverse thermoelectric or Peltier elements, also referred to herein as micro-Peltier cooling (MPC) units or electrodes. The MPC units may be on outer surface of an inflatable or balloon member or a tip electrode shell wall that has a fluid-containing interior cavity acting as a heat sink. Each MPC unit has a hot junction and a cold junction whose temperatures are regulated by the heat sink, and a voltage/current applied to the MPC units. A temperature differential of about 70 degrees Celsius may be achieved between the hot and cold junctions for extreme cooling, especially where the MPC units include semiconductor materials with high Peltier co-efficients. An outer coating of thermally-conductive but electrically-insulative material seals the MPC units to prevent unintended current paths through the MPC units.

A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.

Proposed are an organic-inorganic composite thermoelectric material and a preparation method thereof. The organic-inorganic composite thermoelectric material includes an organic matrix and an inorganic thermoelectric portion dispersed in the organic matrix and including a nanomaterial. The organic matrix includes an organic conductor, and the nanomaterial includes at least one selected from the group consisting of a chalcogen element and a chalcogenide. The organic-inorganic composite thermoelectric material of the present invention has advantages of low cost and excellent thermoelectric properties through complexation of an aligned inorganic thermoelectric material and an organic thermoelectric material.

The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.

This disclosure relates to an integrated thermoelectric cooler and methods for forming thereof. The integrated thermoelectric cooler can include a plurality of thermoelectric rods located between the detector substrate and a system interposer. The detector substrate and the system interposer can directly contact ends of the thermoelectric rods. The integrated thermoelectric cooler can be formed by forming the plurality of thermoelectric rods on reels, for example, and the plurality of thermoelectric rods can be thinned down to a certain height. The thermoelectric rods can be transferred and bonded to the system substrate. An overmold can be formed around the plurality of thermoelectric rods. The height of the overmold and thermoelectric rods can be thinned down to another height. The thermoelectric rods can be bonded to the detector substrate. In some examples, the overmold can be removed.

An n-type thermoelectric conversion material expressed in a chemical formula X.sub.3-xX′.sub.xT.sub.3-yCu.sub.ySb.sub.4 (0≦x<3, 0≦y<3.0, and x+y>0), the X includes one or more element(s) of Zr and Hf, the X′ includes one or more element(s) of Nb and Ta, and the T includes one or more element(s) selected from Ni, Pd, and Pt, while including at least Ni, the n-type thermoelectric conversion material expressed in the chemical formula X.sub.3-xX′.sub.xT.sub.3-yCu.sub.ySb.sub.4 has symmetry of a cubic crystal belonging to a space group I-43d.

The present invention relates to a method for manufacturing a thermoelectric module which utilises the concept of solid-liquid interdiffusion bonding for both forming the metallization, interconnection and bonding between the thermoelectric elements and the electric contacts and the forming of a hermetically sealing of the thermoelectric module.

A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.

The present disclosure relates to a photoelectric conversion apparatus. The photoelectric conversion apparatus includes a carbon nanotube layer, a first thermoelectric conversion layer, a second thermoelectric conversion layer, a first electrode and a second electrode. The carbon nanotube layer includes a plurality of carbon nanotubes. An areal density of the carbon nanotube layer is in a range from about 0.16 g/m.sup.2 to about 0.32 g/m.sup.2.