A flexible vibration module is disclosed. The flexible vibration module includes a piezoelectric composite layer, including: a plurality of piezoelectric portions each having a piezoelectric characteristic, where at least two of the plurality of piezoelectric portions have different sizes; and a flexible portion between the plurality of piezoelectric portions.

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

A device for measuring a concentration of a component in a target sample includes a flow chamber with a first channel that receives a reference sample having a known concentration of the component. The flow chamber also includes a second channel that receives the target sample having an unknown concentration of the component. A pump operates to pump the reference sample and the target sample at a same volume flow rate through the first and second channels, respectively. A thermal mass flow meter measures a thermal conductivity of the reference sample, a thermal conductivity of the target sample, or both.

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

In an angular velocity sensor, a pair of support parts are separated from each other in an x-axis direction in an orthogonal coordinate system xyz. A main part extends along the x-axis. A pair of extension parts connect two ends of the main part and inner sides of the support parts. The driving arms extend from the main part alongside each other in a y-axis direction separated from each other in the x-axis direction. The detecting arm extends from the main part in the y-axis direction at a position which is between the pair of driving arms. The driving circuit supplies voltages so that the pair of driving arms vibrate so as to bend to inverse sides from each other in the x-axis direction. The detecting circuit detects the signal generated due to bending deformation of the detecting arm in the z-axis direction.

A multi-layered piezoelectric ceramic-containing structure There is provided a multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer. There is also provided a method of forming the structure.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

An ultrasonic fingerprint recognition sensor and a manufacturing method thereof, and a display device are disclosed. The ultrasonic fingerprint recognition sensor includes a resonant cavity, a receiver electrode, a drive electrode, and a piezoelectric thin film layer between the receiver electrode and the drive electrode, the resonant cavity is on a side, closer to the piezoelectric thin film layer, of the receiver electrode, and is configured to increase vibration amplitude of the piezoelectric thin film layer.

A backing member includes: a resin body including a lower surface and an upper surface opposite to each other; a plurality of leads each of which extends in a first direction from the lower surface toward the upper surface, and that are embedded at pitches in the resin body; and a plurality of insulating spacers each of which is provided between adjacent ones of the leads and extends in a second direction intersecting with the first direction, and that contact the leads.