A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

An omnidirectional electroacoustic transducer capable of reproducing a sound with high acoustic quality and sufficient sound volume in a wide frequency band is provided with a small number of components. The electroacoustic transducer includes: two or more electroacoustic transduction units each including an electroacoustic transduction film and an elastic supporter, the electroacoustic transduction film having a polymer composite piezoelectric body in which piezoelectric body particles are dispersed in a viscoelastic matrix formed of a polymer material having viscoelasticity at a normal temperature, and two thin film electrodes laminated on both surfaces of the polymer composite piezoelectric body, and the elastic supporter being disposed to be closely attached to one principal surface of the electroacoustic transduction film so as to cause the electroacoustic transduction film to be bent, in which the two or more electroacoustic transduction units are disposed so that the electroacoustic transduction films face outward and form some or all of faces of a polyhedron.

A bulk acoustic wave resonator includes a substrate, and a stack that is supported by the substrate. The stack includes a first electrode, a multilayer buffer, a piezoelectric layer, and a second electrode. The multilayer buffer is disposed between the first electrode and the piezoelectric layer, and the piezoelectric layer is disposed between the multilayer buffer and the second electrode. The multilayer buffer includes two or more pairs of alternating layers. A first pair of the two or more pairs include a first layer of crystalline material having a first lattice constant, and a second layer of crystalline material having a lattice constant that is distinct from the first lattice constant.

A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986≤c/a≤1.014.

A bulk-acoustic wave (BAVV) resonator is provided. The BAW includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer disposed to cover at least a portion of the first electrode, and a second electrode disposed to cover at least a portion of the piezoelectric layer, wherein the piezoelectric layer includes an intermediate layer, a first layer disposed above the intermediate layer and a second layer disposed below the intermediate layer, the first layer and the second layer are symmetrical in relation to a plane through which a central line of the intermediate layer passes in a thickness direction, and a thickness of the intermediate layer is greater than a thickness of each of the first and second layers.

A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

An ultrasonic device includes: a substrate provided with a first opening and a second opening; a support film that is provided on the substrate and blocks the first opening and the second opening; a transmitting piezoelectric film that is provided on the support film at a position which overlaps the first opening when viewed in a thickness direction of the substrate and is interposed between a pair of electrodes in the thickness direction of the substrate; and a receiving piezoelectric film that is provided on the support film at a position which overlaps the second opening when viewed in the thickness direction of the substrate and is interposed between a pair of electrodes in the thickness direction of the substrate. In the thickness direction of the substrate, a thickness dimension of the transmitting piezoelectric film is smaller than a thickness dimension of the receiving piezoelectric film.

A piezoelectric film includes a substrate having flexibility, and at least two piezoelectric elements provided to the substrate so as to be arranged at intervals of a first dimension along a first direction, the piezoelectric elements are each configured by stacking a first electrode film, a piezoelectric film made of an inorganic material, and a second electrode film along a thickness direction of the substrate, and an area between the piezoelectric elements adjacent to each other along the first direction forms a vibrational region which can be displaced in the thickness direction.

An electronic device comprises a haptic feedback system. The haptic feedback system includes a first haptic actuator coupled to a controller via a first set of two or more electrodes, and a second haptic actuator coupled to the first haptic actuator, and further coupled to the controller via a second set of two or more electrodes. The controller is configured to provide a first drive signal to the first haptic actuator via the first set of two or more electrodes, and to provide a second drive signal, different from the first drive signal, to the second haptic actuator via the second set of two or more electrodes. Combining two haptic actuators allows for a broader range of feedback and a heightened user experience.

A piezoelectric thin film 3 contains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a (001) plane, a (110) plane or a (111) plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film 3.