A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986≤c/a≤1.014.

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

An imaging assembly for an intraluminal device is provided. In one embodiment, the imaging assembly includes: an array of ultrasound transducer elements spaced apart by air kerfs; a plurality of buffer elements surrounding the array of ultrasound transducer elements, wherein the plurality of buffer elements are spaced apart by gaps; and a sealing material filling portions of the gaps between the plurality of buffer elements.

A piezoelectric sensor and a manufacturing method therefor, and a detection apparatus, which relate to the technical field of sensing. The piezoelectric sensor includes: an array substrate: a first capping layer located on the array substrate and including a first portion and a second portion, wherein the first portion covers the array substrate, a cavity is provided between the second portion and the array substrate, and the second portion is provided with a first opening: a first electrode located above the first capping layer and above the cavity, a piezoelectric thin film located on the first electrode, and a second electrode located on the piezoelectric thin film.

In a chip-on-array approach, acoustic and electronic modules are separately formed. The acoustic stack is connected to one interposer, and the electronics are connected to another interposer. Different connection processes (e.g., using low temperature bonding for the acoustic stack and higher temperature-based interconnect for the electronics) may be used. This arrangement may allow for different pitches of the transducer elements and the I/O of the electronics by staggering vias in the interposers. The two interposers are then connected to form the chip-on-array.

The input device includes an LCD panel, a touch sensor arranged over the surface of the LCD panel, and a vibration generating unit having an actuator and a strain detector, the vibration generating unit being arranged on the back side of the LCD panel and connected to a securing portion provided on the back surface of the LCD panel via a rigid connecting member.

A thin-film transistor may include an amorphous semiconductor channel layer, an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer, a source electrode coupled to the organic material piezoelectric stress gate layer, a drain electrode coupled to the organic material piezoelectric stress gate layer and a gate electrode coupled to the organic material piezoelectric stress gate layer. In some embodiments, the amorphous semiconductor channel layer may be amorphous indium gallium zinc oxide. In some embodiments, the organic material piezoelectric stress gate layer may be organic polyvinylidene fluoride. In some embodiments, the amorphous semiconductor channel layer may be formed on a flexible substrate.

A method is provided for fabricating a thin-film electronic device employing a piezoelectric plate. The method provides a plurality of piezoelectric plates, and a substrate with electronic devices, each electronic device including a top surface well. A piezoelectric plate suspension is formed and flowed over the substrate. In response to the piezoelectric plate suspension flow, piezoelectric plates are captured in the top surface wells. The electric device top surface wells have well bottom surfaces, with bottom electrical contacts formed on the bottom surfaces. Thus, the capture of a piezoelectric plate in a top surface well entails interfacing a piezoelectric plate electrode, either the first electrode or the second electrode, to the bottom electrical contact. Subsequent to capturing the piezoelectric plates in the top surface wells, a thin-film process forms a conductive line overlying the exposed piezoelectric device electrode (i.e., the electrode not connected to the bottom electrical contact).

A piezoelectric actuator of a multilayer design includes outer electrodes that are fastened by means of a bonding layer applied by thermal spraying. For example, the outer electrodes are formed as a woven wire fabric. Furthermore, a method for fastening an outer electrode in a piezoelectric actuator is specified.

The invention relates to a pump having a piezo diaphragm transducer arranged at a pump body of the pump, and to a method for producing a pump, wherein a piezo diaphragm transducer is mounted to a pump body, wherein the method, among other things, has providing a piezoceramic layer. In accordance with the invention, at least one piezo element is diced from the piezoceramic layer so that the at least one piezo element has a regular polygon shape having at least six corners. In addition, the method has forming the piezo diaphragm transducer by mounting the piezo element to a pump diaphragm.