Patent classifications
H01M50/11
Secondary battery and battery pack including the same
Provided are a secondary battery and a battery pack including the secondary battery. A sealing plate has a positive electrode terminal attachment hole. A positive electrode terminal penetrates the positive electrode terminal attachment hole. An external conductive member is connected to a portion of the positive electrode terminal located on the battery outer side with respect to the sealing plate. The conduction path between a positive electrode plate and the positive electrode terminal is provided with a current interrupting mechanism. A first insulating member made of resin is disposed between the sealing plate and the positive electrode terminal. A second insulating member having higher thermal resistance than the first insulating member is disposed between the external conductive member and the sealing plate.
INTEGRATED CHIP WITH SOLID-STATE POWER STORAGE DEVICE
The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.
Encapsulating in-situ energy storage device with electrode contact
An energy storage device sits within a trench with electrically insulated sides within a substrate. Within the trench there is an anode, an electrolyte disposed on the anode, and a cathode structure disposed on the electrolyte. Variations of an electrically conductive contact are disposed on and in electrical contact with the cathode structure. At least part of the conductive contact is disposed within the trench and the conductive contact partially seals the anode, electrolyte, and cathode structure within the trench. Conductive and/or non-conductive adhesives are used to complete the seal thereby enabling full working electrochemical devices where singulation of the devices from the substrate enables high control of device dimensionality and footprint.
Module with reduced deterioration of binding member
A module includes a first member that is a battery or a gas tank in which pressure fluctuation happens along one axis direction, a pair of second members, the second members being arranged on end portions of the first member in the one axis direction, respectively, and a binding member binding the first member and the second members while pressurizing them. The binding member is formed as fiber-reinforced plastic (FRP) containing fiber and resin is revolved. The FRP includes a base fiber layer with a fiber direction along a revolution direction, and a reinforcing fiber layer with a fiber direction different from that of the base fiber layer. The reinforcing fiber layer has a non-overlapping portion between both end portions in a revolved state. The non-overlapping portion is positioned in a region facing the first member.
METHOD FOR PRODUCING LITHIUM-ION BATTERIES, IN PARTICULAR HIGH-POWER BATTERIES, AND BATTERY OBTAINED BY THIS METHOD
High-power battery architecture comprising unique anode and cathode conductive means procuring improved battery life.
All solid battery and manufacturing method of the same
An all solid battery includes a multilayer chip in which each of a plurality of solid electrolyte layers including solid electrolyte and each of a plurality of internal electrodes including an electrode active material are alternately stacked, the multilayer chip having a rectangular parallelepiped shape, the plurality of internal electrodes being alternately exposed to two side faces of the multilayer chip other than two end faces of a stacking direction of the multilayer chip, and a pair of external electrodes that contacts the two side faces and include solid electrolyte.
ENERGY STORAGE DEVICE HAVING AN INTERLAYER BETWEEN ELECTRODE AND ELECTROLYTE LAYER
Approaches herein provide a device, such as a battery protection device, including a cathode current collector and an anode current collector provided atop a substrate, a cathode provided atop the cathode current collector, and an electrolyte layer provided over the cathode. An interlayer, such as one or more layers of silicon, antimony, magnesium, titanium, magnesium lithium, and/or silver lithium, is formed over the electrolyte layer. An anode contact layer, such as an anode or anode current collector, is then provided over the interlayer. By providing the interlayer atop the electrolyte layer prior to anode contact layer deposition, lithium from the cathode side alloys with the interlayer, thus providing a more isotropic or uniaxial detachment of the anode contact layer.
METHOD OF PROCESSING LAYERED STRUCTURES
A method of processing a stack of layers to provide a stack of discrete layer elements, comprises the steps of: providing a stack of layers comprising: #a first layer (20) provided by a first material; #a third layer (16) provided by a solid electrolyte; and #a second layer (18) located between the first and third layers, the second layer having a thickness of at least 500 nm and being provided by a second material comprising at least 95 atomic % amorphous silicon; removing a through-thickness portion of the first layer (20) to form a first discrete layer element (20a) provided by the first material; removing a through-thickness portion of the second layer (18) to form a second discrete layer element (18a) provided by the second material, the second discrete layer element being located between the first discrete layer element (20a) and the solid electrolyte; and etching the third layer (16) using the second discrete layer element (18a) as an etching mask, to form a third discrete layer element (16a) provided by the solid electrolyte; wherein the first, second and third discrete layer elements provide the stack of discrete layer elements.
METHOD OF PROCESSING LAYERED STRUCTURES
A method of processing a stack of layers to provide a stack of discrete layer elements, comprises the steps of: providing a stack of layers comprising: #a first layer (20) provided by a first material; #a third layer (16) provided by a solid electrolyte; and #a second layer (18) located between the first and third layers, the second layer having a thickness of at least 500 nm and being provided by a second material comprising at least 95 atomic % amorphous silicon; removing a through-thickness portion of the first layer (20) to form a first discrete layer element (20a) provided by the first material; removing a through-thickness portion of the second layer (18) to form a second discrete layer element (18a) provided by the second material, the second discrete layer element being located between the first discrete layer element (20a) and the solid electrolyte; and etching the third layer (16) using the second discrete layer element (18a) as an etching mask, to form a third discrete layer element (16a) provided by the solid electrolyte; wherein the first, second and third discrete layer elements provide the stack of discrete layer elements.
Semiconductor Battery and Semiconductor Device Including a Semiconductor Battery
A semiconductor battery includes a substrate, a battery anode semiconductor material arranged in or over the substrate, a battery cathode material arranged in or over the substrate and a battery electrolyte disposed between the battery anode semiconductor material and the battery cathode material. An electrically insulating encapsulant has a first face and a second face. The substrate is at least partly embedded in the encapsulant. An anode electrode is electrically connected to the battery anode semiconductor material and is disposed over the second face of the encapsulant. A cathode electrode is electrically connected to the battery cathode material and is disposed over the first face of the encapsulant.