A phase-shift unit includes: a first substrate and a second substrate provided opposite to each other; a medium layer provided between the first substrate and the second substrate; a microstrip line disposed at a side of the second substrate facing towards the first substrate; and a grounding layer provided at a side of the first substrate facing towards the second substrate and formed with a via hole; wherein a projection of the via hole onto the second substrate and a projection of the microstrip line onto the second substrate have an overlapped area therebetween; and wherein the via hole is configured to feed a phase-shifted microwave signal out of the phase-shift unit, or feed a microwave signal into the phase-shift unit such that the microwave signal is phase-shifted.

An architecture for, and techniques for fabricating, a thermal decoupling device are provided. In some embodiments, thermal decoupling device can be included in a thermally decoupled cryogenic microwave filter. In some embodiments, the thermal decoupling device can comprise a dielectric material and a conductive line. The dielectric material can comprise a first channel that is separated from a second channel by a wall of the dielectric material. The conductive line can comprise a first segment and a second segment that are separated by the wall. The wall can facilitate propagation of a microwave signal between the first segment and the second segment and can reduce heat flow between the first segment and the second segment of the conductive line.

A radio frequency (“RF”) waveguide device fabricated by additive manufacturing is provided that includes a RF channel comprising a wall and a RF component comprising an unsupported span extending from the wall of the RF channel. The unsupported span can include at least one unsupported surface extending from the wall at an oblique angle relative to the wall. The RF component formed in this manner with additive manufacturing does not negatively impact the RF performance of the RF waveguide.

A braider includes: a plurality of cylindrical bobbins around which flat foil yarns are wound so as not to be inverted; a plurality of carriers to which the bobbins are rotatably attached, the plurality of carriers being configured to feed out the flat foil yarns from the bobbins; a core material supply mechanism configured to supply a core material to be placed inside the outer conductor; a waveguide take-out mechanism configured to take out the flexible waveguide after the outer conductor is formed; and a carrier movement determination mechanism configured to determine movement of the carriers so that there are always three or more cross points formed by the individual flat foil yarns with other ones of the flat foil yarns in an enlarged portion before the flat foil yarns form a braided shape.

Embodiments described herein may be related to apparatuses, processes, and techniques related to positioning signal and ground vias, or ground planes, in a glass core to control impedance within a package. Laser-assisted etching processes may be used to create vertical controlled impedance lines to enhance bandwidth and bandwidth density of high-speed signals on a package. Other embodiments may be described and/or claimed.

Embodiments disclosed herein include coplanar waveguides and methods of forming coplanar waveguides. In an embodiment, a coplanar waveguide comprises a core, and a signal trace on the core. In an embodiment, the signal trace has a first edge and a second edge. In an embodiment, a first ground trace is over the core, and the first ground trace is adjacent to the first edge of the signal trace. In an embodiment, a first ground via plane is below the first ground trace. The coplanar waveguide may further comprise a second ground trace over the core, and the second ground trace is adjacent to the second edge of the signal trace. In an embodiment, a second ground via plane below the second ground trace.

A broadband microstrip ferrite circulator or isolator includes a carrier. The broadband microstrip ferrite circulator or isolator further includes a dielectric substrate having an opening therein. The broadband microstrip ferrite circulator or isolator further includes a ferrite disc positioned within the opening of the dielectric substrate. The broadband microstrip ferrite circulator or isolator further includes a conductor having three contacts extending therefrom, the conductor being positioned on the ferrite disc. The broadband microstrip ferrite circulator or isolator further includes a magnet. The broadband microstrip ferrite circulator or isolator further includes a spacer positioned between the conductor and the magnet.

A device includes a first substrate having a principal surface; a second substrate having a principal surface, in which the first substrate is bump-bonded to the second substrate such that the principal surface of the first substrate faces the principal surface of the second substrate; a circuit element having a microwave frequency resonance mode, in which a first portion of the circuit element is arranged on the principal surface of the first substrate and a second portion of the circuit element is arranged on the principal surface of the second substrate; and a first bump bond connected to the first portion of the circuit element and to the second portion of the circuit element, in which the first superconductor bump bond provides an electrical connection between the first portion and the second portion.

A complementary metal-oxide-semiconductor (CMOS) device includes a metal oxide layer comprising anodic aluminum oxide (AAO) and one or more nanowires (NW) of an electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer opposite the first side, a first electrically conducting layer disposed on the first side of the metal oxide layer, and a second electrically conducting layer disposed on the second side of the metal oxide layer. The nanowires form a via electrically connecting first electrically conducting layer and the second electrically conducting layer.

A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.