A radio-frequency device comprising (1) an input resonator configured to receive an input signal, (2) an output resonator configured to provide an output signal, and (3) a plurality of signal paths coupled between the input resonator and the output resonator, wherein each signal path included the plurality of signal paths comprises a bandpass filter that (A) is at least partially composed of a ceramic material and (B) has a bandpass center frequency different from every other signal path included in the plurality of signal paths. Various other apparatuses, systems, and methods are also disclosed.

Embodiments described herein may be related to apparatuses, processes, and techniques related creating millimeter wave components within a glass core of a substrate within a semiconductor package. These millimeter wave components, which include resonators, isolators, directional couplers, and circulators, may be combined to form other structures such as filters or multiplexers. Other embodiments may be described and/or claimed.

An assembly for a radio frequency filter includes: an elongate pedestal with an upper surface; a resonator; a tuning member that is positioned above the resonator; and a screw that mounts the resonator to the upper surface of the pedestal, the screw including a shank with a thread and a head, the head including a plurality of recesses configured to receive a tool, the recesses extending through the head.

A radar based, fill-level sensor comprising at least one semiconductor element, including at least a semiconductor chip and a chip package, in which the at least one semiconductor chip is arranged, wherein the at least one semiconductor chip has at least one coupling element, which serves as a signal gate for electromagnetic waves, preferably in the millimeter wave region, characterized in that at least one first resonator structure is arranged on a surface portion of the chip package.

A system and method for treating a cavity comprises preparing a superconducting radio frequency (SRF) cavity for removal of a dielectric layer from on an inner surface of the SRF cavity, subjecting the SRF cavity to a heat treatment in order to remove the dielectric layer from the inner surface of the SRF cavity, and preventing the development of a new dielectric layer on the inner surface of the SRF cavity by preventing an interaction between the inner surface of the SRF cavity and atmospheric gasses.

A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

A millimeter-wave resonator is produced by drilling a plurality of holes into a piece of metal. Each hole forms an evanescent tube having a lowest cutoff frequency. The holes spatially intersect to form a seamless three-dimensional cavity whose fundamental cavity mode has a resonant frequency that is less than the cutoff frequencies of all the evanescent tubes. Below cutoff, the fundamental cavity mode does not couple to the waveguide modes, and therefore has a high internal Q. Millimeter waves can be coupled into any of the tubes to excite an evanescent mode that couples to the fundamental cavity mode. The tubes also provide spatial and optical access for transporting atoms into the cavity, where they can be trapped while spatially overlapping the fundamental cavity mode. The piece of metal may be superconducting, allowing the resonator to be used in a cryogenic environment for quantum computing and information processing.

A low-temperature, high stability co-fired microwave dielectric composite of ceramic and glass, including 85-99 wt % microwave dielectric ceramic of formula [1-y-z[(1−x)Mg.sub.2SiO.sub.4−xCa.sub.2SiO.sub.4]−yCaTiO.sub.3−zCaZrO.sub.3, wherein 0.2≦x≦0.7,0.05≦y≦0.3 and 0.02≦z≦0.15], and 1 to 15 wt % with Li.sub.2O—BaO—SrO—CaO—B.sub.2O.sub.3—SiO.sub.2 glass respectively made at a low sintering temperature of ceramic for co-firing with Ag or Cu electrode, employing eutectic phase of ceramic oxides to reduce its melting temperature, a low melting-point glass material with high chemical stability as a sintering aid added to oxides and raw material powders of Li.sub.2O, BaO, SrO, CaO, B.sub.2O.sub.3 and SiO.sub.2, obtained by combining and melting the ingredients in the temperature range between 1000 to 1300° C., quenching and crashing, and then adding it to the main ceramic oxides to form the final composition. This ceramic/glass composite material may be co-fired with an Ag and Cu electrode at 900° C.-970° C. for 0.5-4 hours in a protective atmosphere. After sintering, this dielectric material possesses efficacious microwave dielectric properties, dielectric constant between middle-K to low-K at 8.sup.−15, high quality factors, low dielectric loss, low temperature-capacitance coefficient and superior chemical stability suitable for manufacture of multilayer ceramic devices.

Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.