A component carrier includes a stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure. The at least one electrically conductive layer structure includes a first trace. A tapering trench is formed in the at least one electrically insulating layer structure beside and below the first trace. A method of manufacturing the component carrier is also described.

Signal conductor patterns (21, 31) are respectively formed on a first main surface (101) and a second main surface (102) of an insulating substrate (100). Ground conductor patterns (222, 322) are formed on the first main surface (101) and the second main surface (102). A first conductive member (41) is formed in the insulating substrate (100) and electrically connects the signal conductor patterns (21, 31) in the thickness direction. A second conductive member (42) is formed in the insulating substrate (100) and connected to the ground conductor patterns (222, 322). A dielectric member (43) is disposed between the first conductive member (41) and the second conductive member (42), is in contact with the first conductive member (41) and the second conductive member (42), and has a dielectric constant different from the dielectric constant of the insulating substrate (100).

Wideband millimeter-wave microstrip antenna having impedance stabilizing elements, and antenna array including same. An antenna array comprises at least one antenna assembly. The at least one antenna assembly has a plurality of antennas coupled in series and includes a solitary millimeter-wave wideband patch antenna as a terminal antenna in the series. The millimeter-wave wideband patch antenna comprises a main patch and two rectangular impedance stabilizing elements. The two rectangular impedance stabilizing elements are symmetrically disposed at a coupling distance from the main patch and extend parallel to the main patch. One of the two rectangular impedance stabilizing elements is disposed on one side of the main patch and the other of the two rectangular impedance stabilizing elements is disposed on an opposing side of the main patch. A width of each of the two rectangular impedance stabilizing elements is less than half of a width of the main patch.

A high-frequency line substrate is mounted on a printed circuit board. The printed circuit board includes a first high-frequency line. The high-frequency line substrate includes a second high-frequency line and lead pins that connect the first high-frequency line and the second high-frequency line. At the contact portions between the signal lead pins and the second high-frequency line of the high-frequency line substrate, and at the contact portions between the ground lead pins and the second high-frequency line of the high-frequency line substrate, the height of the ground lead pins from an upper surface of the printed circuit board is greater than the height of the signal lead pins.

An electronic device according to various embodiments of the present invention may comprise: a circuit substrate comprising a first layer including a first wire, a second wire formed at one side surface of the first wire along the first wire, and a third wire formed at the other side surface of the first wire along the first wire, a second layer including a ground plane formed along the first wire, the second wire, and the third wire and electrically connected to the second wire and the third wire, and an insulation layer disposed between the first layer and the second layer and having first permittivity; and a conductive member which is disposed above the first layer to have a dielectric-fillable interval space along the first wire and is electrically connected to the ground of the electronic device, the dielectric having second permittivity lower than the first permittivity.

A planar micro-electromechanical system (MEMS)-based phase shifter is described which comprises a dielectric substrate, a grounded coplanar waveguide (GCPW) transmission line for carrying input and output signals, a high-resistivity silicon (HRS) slab coated with metallic gratings over the GCPW line, and a MEMS actuator for adjusting a distance between the HRS slab and the GCPW line to provide a phase shift.

Various aspects directed towards an integrated transverse electromagnetic (TEM) transmission line structure for probe calibration are disclosed. In one example, the integrated TEM transmission line structure includes a printed circuit board (PCB) and an air-dielectric coplanar waveguide (CPW). For this example, the air-dielectric CPW includes an air trace in a cutout slot of the PCB. In another example, a method is disclosed, which includes forming an air-dielectric CPW on a PCB in which the air-dielectric CPW includes an air trace in a cutout slot of the PCB. In a further example, an integrated TEM transmission line structure includes an air-dielectric CPW with an air trace. For this example, a first connector is electrically coupled to a first end of the air-dielectric CPW, and a second connector is electrically coupled to a second end of the air-dielectric CPW.

Aspects of the present disclosure are directed to a photonic integrated circuit (PIC) having a resistivity-engineered substrate to suppress radio-frequency (RF) common-mode signals. In some embodiments, a semiconductor substrate is provided that comprises two portions having different levels of resistivity to provide both suppression of common mode signals, and reduction of RF absorption loss for non-common mode RF signals. In such embodiments, a bottom portion of the semiconductor substrate has a low resistivity to suppress common mode via RF absorption, while a top portion of the semiconductor substrate that is adjacent to conductors in the IC has a high resistivity to reduce RF loss.

A dielectric substrate for RF, microwave, or millimeter wave devices, circuits, or surfaces includes a propagating region for transmitting or reflecting an electromagnetic field, and one or more material-filled vias located within the propagating region. The application of an external electric or magnetic field to the material-filled vias may be used to tune the electric permittivity or the magnetic permeability of the fill material and hence control the effective electric permittivity or the effective magnetic permeability of the dielectric substrate within the propagating region. A dimension of the material-filled vias may be less than half of a wavelength of the propagating electromagnetic field. The fill material may include liquid crystals, a ferroelectric crystal composite, a ferromagnetic crystal composite, organic semiconductors, and/or electro-optic or magneto-optic polymers.

A via-less crossover for use in broadband microwave/mm-wave circuitry, including: a dielectric substrate; a top layer disposed on one side of the substrate and including a microstrip line with an input and an output, two tapered sections placed around the microstrip line along a co-planar waveguide (CPW) central line, one microstrip portion having an input and which connects to one top layer, rectangular stub disposed adjacent to one of the tapered sections, and another microstrip portion having an output and which connects to another top layer, rectangular stub disposed adjacent to the other of the tapered sections; and a ground layer disposed on an opposite side of the substrate and including a bottom layer CPW central line situated in a central cutout and which connects between a bottom layer, rectangular stub on one side and a bottom layer, rectangular stub on the other side situated in ground cutouts, respectively.