This application provides an example dielectric filter and an example communications device. The dielectric filter includes a dielectric block. At least two resonant through holes that are parallel to each other are provided in the dielectric block. The resonant through hole is a stepped hole. The stepped hole includes a large stepped hole and a small stepped hole that are arranged coaxially and that are in communication. The small stepped hole passes through a first surface of the dielectric block. The large stepped hole passes through a second surface of the dielectric block. A stepped surface is formed between the large stepped hole and the small stepped hole. The surfaces of the dielectric block are covered with conductor layers. The conductor layers cover the surfaces of the dielectric block and inner walls of the large stepped hole and the small stepped hole. A conductor layer of the inner wall of the large stepped hole is short-circuited with a conductor layer of the second surface. A conductor layer of the inner wall of the small stepped hole is short-circuited with a conductor layer of the first surface. A loop gap that does not cover the conductor layers is provided on the stepped surface. The loop gap is arranged around the small stepped hole.

A dielectric composition contains a complex oxide represented by a composition formula of Bi.sub.xZn.sub.yNb.sub.zO.sub.1.75+δ. x+y+z=1.00. x<0.20. 0.20≤y≤0.50. 0.25≤x/z. A dielectric composition contains a complex oxide represented by a composition formula of Bi.sub.xZn.sub.yNb.sub.zO.sub.1.75+δ. x+y+z=1.00. 0.20≤y≤0.50. 1.5<x/z≤3.0. z<0.25.

A dielectric waveguide filter comprising a block of dielectric material including exterior surfaces covered with a layer of conductive material. A plurality of resonators are formed on the block. RF signal input/outputs are formed on the block. An RF signal is transmitted through the block in a serpentine pattern. In one embodiment, a RF signal transmission channel is formed in the block and extends between and surrounding selected ones of the plurality of resonators in a serpentine pattern. In one embodiment, selected ones of the plurality of resonators are comprised of respective islands of dielectric material formed on one of the top and bottom surfaces of the block of dielectric material surrounded by the channel and respective counter-bores formed and extending into the respective islands of dielectric material. In another embodiment, the respective islands of dielectric material and counter-bores defining the respective resonators are formed in opposed top and bottom surfaces of the block.

A dielectric waveguide filter comprising a block of dielectric material including exterior surfaces covered with a layer of conductive material. A plurality of resonators are formed on the block. RF signal input/outputs are formed on the block. An RF signal is transmitted through the block in a serpentine pattern. In one embodiment, a RF signal transmission channel is formed in the block and extends between and surrounding selected ones of the plurality of resonators in a serpentine pattern. In one embodiment, selected ones of the plurality of resonators are comprised of respective islands of dielectric material formed on one of the top and bottom surfaces of the block of dielectric material surrounded by the channel and respective counter-bores formed and extending into the respective islands of dielectric material. In another embodiment, the respective islands of dielectric material and counter-bores defining the respective resonators are formed in opposed top and bottom surfaces of the block.

A band pass filter includes a dielectric substrate, conductor plates, a ground via, waveguide resonators, and a trap resonator. The conductor plates are inside the dielectric substrate and opposed to each other. The ground via connects the conductor plates together. The waveguide resonators are coupled in series in a space between the conductor plates along a principal coupling path from an input terminal to an output terminal. Waveguide resonators adjacent along the principal coupling path are subjected to inductive coupling. The trap resonator couples waveguide resonators in two pairs included in the waveguide resonators as jumping over a portion of the principal coupling path, and capacitive couples the waveguide resonators included in each of the pairs.

A multi-mode filter with a resonator having a plurality of resonator bodies which are rectangular prisms and the filter being configured with a through hole that electrically connects an input and an output to the center of a coupling structure between a respective pair of slabs. The multi-mode filter further comprising a plurality of coupling aperture segments which are coupling structures between each pair of resonator bodies or slabs such that two triangular apertures at opposite corners of at least two different slab-cube interfaces are utilized with the triangular apertures being diagonally opposed to one another across the respective interface.

Disclosed herein are IC structures, packages, and devices that include III-N transistors integrated on the same substrate or die as resonators of RF filters. An example IC structure includes a support structure (e.g., a substrate), a resonator, provided over a first portion of the support structure, and an III-N transistor, provided over a second portion of the support structure. The IC structure includes a piezoelectric material so that first and second electrodes of the resonator enclose a first portion of the piezoelectric material, while a second portion of the piezoelectric material is enclosed between the channel material of the III-N transistor and the support structure. In this manner, one or more resonators of an RF filter may be monolithically integrated with one or more III-N transistors. Such integration may reduce costs and improve performance by reducing RF losses incurred when power is routed off chip.

An epsilon-and-mu-near-zero (EMNZ) metamaterial. The EMNZ metamaterial includes a waveguide. A length l of the waveguide satisfies a length condition according to l≤0.1λ, where λ is an operating wavelength of the EMNZ metamaterial. The EMNZ metamaterial further includes a magneto-dielectric material deposited on a lower wall of the waveguide. The waveguide includes an impedance surface placed on the magneto-dielectric material.

An epsilon-and-mu-near-zero (EMNZ) metamaterial. The EMNZ metamaterial includes a waveguide. A length l of the waveguide satisfies a length condition according to l≤0.1λ, where λ is an operating wavelength of the EMNZ metamaterial. The EMNZ metamaterial further includes a magneto-dielectric material deposited on a lower wall of the waveguide. The waveguide includes an impedance surface placed on the magneto-dielectric material.

A radar based, fill-level sensor comprising at least one semiconductor element, including at least a semiconductor chip and a chip package, in which the at least one semiconductor chip is arranged, wherein the at least one semiconductor chip has at least one coupling element, which serves as a signal gate for electromagnetic waves, preferably in the millimeter wave region, characterized in that at least one first resonator structure is arranged on a surface portion of the chip package.