An embodiment of the present invention is an IC chip mounting apparatus includes: a conveyor configured to convey an antenna continuous body on a conveying surface, the antenna continuous body having a base material and plural inlay antennas continuously formed on the base material, the antenna continuous body having an adhesive and an IC chip placed at a reference position of each of the antennas; a measurement unit configured to measure an interval between adjacent two of the antennas of the antenna continuous body; a press unit moving machine configured to sequentially feed out press units each having a pressing surface, from a waiting position, to move each of the press units along the conveying surface; and a controller configured to control timing of feeding out each of the press units from the waiting position based on the interval measured by the measurement unit, so that the pressing surface of each of the press units presses a predetermined region containing the reference position of each of the antennas on the conveying surface.

A radio frequency identification (RFID) tag includes an inlay; a magnetic sheet laminated on an attachment object side of the inlay; and a spacer layer disposed between the magnetic sheet and the attachment object. The inlay includes an IC chip configured to store identification information, a loop conductor connected to the IC chip, and an antenna unit connected to the loop conductor.

An antenna structure comprises an impedance matching part, a first conductive structure and a second conductive structure. The first conductive structure with a first length along a first direction is coupled to a first side of the impedance matching part and has a plurality of first polygon conductive structures, each of which is coupled to each other through a first conductive element. The second conductive structure with a second length along a first direction is coupled to a second side of the impedance matching part and has a plurality of second polygon conductive structures, each of which is coupled to each other through a second conductive element, wherein the second length is larger than the first length. The first and second polygon conductive structures are protrusion toward the second direction. In one embodiment, the antenna structure can be applied on an object having metal housing or liquid contained therein.

A system and method for tuning a transistor-based circuit. The system includes a negative impedance converter circuit having a capacitor, a first transistor, and a second transistor. As a current travels through the capacitor, the first transistor and the second transistor each sample voltage at the capacitor and invert the voltage at an input of the negative impedance converter circuit. The negative impedance converter circuit also has a third transistor in series with the capacitor. The third transistor has a base voltage. Changing the base voltage of the third transistor changes the voltage sampled by the first transistor and the second transistor.

A label with RFID function comprises a support layer and an RFID inlay with an RFID chip and an antenna connected to the RFID chip. The RFID inlay is arranged on the support layer. The antenna comprises at least one capacitive element on which the resonant frequency of the antenna depends. By adding the at least one capacitive element to the antenna, the read/write range of the RFID inlay can be increased.

A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

A vibration transducer for sensing vibrations includes a first flexible triboelectric member, a second flexible triboelectric member, a plurality of attachment points, a first electrode and a second electrode. The first flexible triboelectric member includes a first triboelectric layer and a material being on a first position on a triboelectric series. A conductive layer is deposited on the second side thereof. The second flexible triboelectric member includes a second triboelectric layer and a material being on a second position on the triboelectric series that is different from the first position on the triboelectric series. The second triboelectric member is adjacent to the first flexible triboelectric member. When the first triboelectric member comes into and out of contact with the second triboelectric member as a result of the vibrations, a triboelectric potential difference having a variable intensity corresponding to the vibrations can be sensed between the first and second triboelectric members.

A device includes a first antenna arranged on a substrate, with the first antenna comprising a first semiconductor layer having terahertz-wave gain and a first conductor layer, a second antenna arranged on the substrate, with the second antenna comprising a second semiconductor layer having terahertz-wave gain and a second conductor layer, and a third conductor layer arranged on the substrate and electrically connecting the first antenna and the second antenna. A shunt device is arranged on the substrate and electrically connected to the third conductor layer. In planar view, the shunt device does not overlap with at least the first conductor layer.

A device includes a first antenna arranged on a substrate, with the first antenna comprising a first semiconductor layer having terahertz-wave gain and a first conductor layer, a second antenna arranged on the substrate, with the second antenna comprising a second semiconductor layer having terahertz-wave gain and a second conductor layer, and a third conductor layer arranged on the substrate and electrically connecting the first antenna and the second antenna. A shunt device is arranged on the substrate and electrically connected to the third conductor layer. In planar view, the shunt device does not overlap with at least the first conductor layer.