An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×10.sup.18/cm.sup.3 of n-type impurity.

Fiber optic amplification includes a photonic crystal fiber coupled to a pump laser through a first coupler. The pump laser emits a first electromagnetic radiation wave into the photonic crystal fiber at a first oscillation frequency and a second electromagnetic radiation wave into the photonic crystal fiber at a second oscillation frequency equaling the first oscillation frequency. The first and second electromagnetic radiation waves interact to generate a signal comprising an electromagnetic radiation wave at a third oscillation frequency and an idler comprising a fourth electromagnetic radiation wave at a fourth oscillation frequency to be generated and amplified through parametric amplification. Parametric amplification is achieved by four wave mixing. The photonic crystal fiber emits a parametric output signal based on the four wave mixing. A nonlinear crystal frequency doubles the parametric output signal through second-harmonic generation.

Provided are a laser device and an optical apparatus including the same. The laser device includes a pump light source configured to provide pump light, a gain medium configured to acquire a gain of seed laser light by using the pump light, a first curved mirror and a second curved mirror, which are provided at both sides of the gain medium to reflect the seed laser light into the gain medium, an output mirror configured to transmit a portion of the seed laser light reflected by the second curved mirror and reflect the other portion of the seed laser light to the gain medium, a first acoustic wave generator connected to the gain medium and configured to provide a first photoacoustic wave in the gain medium, and a second acoustic wave generator connected to the gain medium and configured to provide a second photoacoustic wave in the gain medium.

A femtosecond pulse laser apparatus includes a pump light source configured to provide a pump light, a gain medium configured to obtain a gain of a laser light using the pump light, a first curved mirror and a second curved mirror, which are provided at both sides of the gain medium, an output mirror configured to transmit a portion of the laser light and reflect the other portion of the laser light to the gain medium, a mode locking portion configured to generate a femtosecond pulse of the laser light, and an acoustic wave generator configured to provide an acoustic wave into the gain medium so as to adjust self-phase modulation of the laser light.

A broadband optical amplifier for operation in the 2 μm visible wavelength band is based upon a single-clad Tm-doped fiber amplifier (TDFA). A compact pump source uses a combination of low-power laser diode with a fiber laser to provide a multi-watt pump beam without needing to include thermal management and/or pump wavelength stability components. The broadband optical amplifier is therefore able to be relatively compact device with fiber coupled output powers of >0.5 W CW, high small signal gain, low noise figure, and large OSNR, important for use as a versatile wideband preamplifier or power booster amplifier.

A broadband optical amplifier for operation in the 2 μm visible wavelength band is based upon a single-clad Ho-doped fiber amplifier (HDFA). A compact pump source uses a combination of discrete laser diode with a fiber laser (which may be a dual-stage fiber laser) to create a pump output beam at a wavelength associated with creating gain in the presence of Ho ions (an exemplary pump wavelength being 1940 nm). The broadband optical amplifier may take the form of a single stage amplifier or a multi-stage amplifier, and may utilize a co-propagating pump and/or a counter-propagating pump arrangement.

A multi-stage thulium-doped (Tm-doped) fiber amplifiers (TDFA) is based on the use of single-clad Tm-doped optical fiber and includes a wavelength conditioning element to compensate for the nonuniform spectral response of the initial stage(s) prior to providing power boosting in the output stage. The wavelength conditioning element, which may comprise a gain shaping filter, exhibits a wavelength-dependent response that flattens the gain profile and output power distribution of the amplified signal prior to reaching the output stage of the multi-stage TDFA. The inclusion of the wavelength conditioning element allows the operating bandwidth of the amplifier to be extended so as to encompass a large portion of the eye-safe 2 μm wavelength region.

A fixed input current is provided to a pump laser of an optical pumping block. Further, a first tuning temperature is provided to the pump laser while providing the fixed input current. The first tuning temperature is based on a target band of a pumping beam and causes the pump laser to generate a light beam having a first frequency band that is dictated by the first tuning temperature and the fixed input current. Further, a second tuning temperature is provided to a temperature dependent optical reflector configured to receive the light beam. The second tuning temperature is based on the target band of the pumping beam and causes the optical reflector to reflect light of the light beam that is within a second frequency band that corresponds to the target frequency band. The reflected light beam is emitted into a transmission optical medium configured to carry an optical signal.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A single-frequency laser apparatus comprises a mirror and a volume Bragg grating (VBG) reflector defining a laser cavity therebetween and an optical gain material for emitting and amplifying an intra-cavity beam in the laser cavity. The optical gain material comprises a transition-metal doped crystal such as a crystal doped with transition-metal ions selected from one or more of Ti.sup.3+ ions, Cr.sup.2+ ions, Cr.sup.3+ ions or Cr.sup.4+ ions. A reflectivity spectrum of the VBG reflector and an optical length of the laser cavity are selected so that a beam output from the laser cavity is a single-frequency output beam and/or includes only one longitudinal mode of the laser cavity. The laser apparatus may provide a robust, compact, low cost, high-power wavelength adjustable (from approximately 650 to 950 nm), narrow linewidth (<100 kHz), single frequency laser source which is suitable for a wide range of applications from laser sensing, spectroscopy, and high precision frequency metrology sectors.