A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

A light source apparatus includes a gas discharge stage, a sensing apparatus, an optical arrangement, an adjustment apparatus, and a control apparatus. The gas discharge stage includes an optical amplifier including a chamber configured to hold a gas discharge medium outputting a light beam, and a set of optical elements configured to form an optical resonator around the optical amplifier. The optical arrangement is configured to image light from a plurality of distinct object planes within the gas discharge stage onto the sensing apparatus. The adjustment apparatus is in physical communication with one or more optical components within the gas discharge stage and is configured to modify at least one geometric aspect of the optical components. The control apparatus is communication with the sensing apparatus and the adjustment apparatus and is configured to provide a signal to the adjustment apparatus based on an output from the sensing apparatus.

An apparatus may include a diode-pumped solid-state laser oscillator configured to output a pulsed laser beam, a modulator configured to modify an energy and a temporal profile of the pulsed laser beam, and an amplifier configured to amplify an energy of the pulse laser beam. A modified and amplified beam to laser peen a target part may have an energy of about 5J to about 10 J, an average power (defined as energy (J) x frequency (Hz)) of from about 25 W to about 200 W, with a flattop beam uniformity of less than about 0.2. The diode-pumped solid-state oscillator may be configured to output a beam having both a single longitudinal mode and a single transverse mode, and to produce and output beams at a frequency of about 20 Hz.

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

A technology is described for a Photonic Integrated Circuit (PIC) radio frequency (RF) oscillator. The PIC RF oscillator can comprise an optical gain media coupled to a first mirror and configured to be coupled to the PIC. The PIC can comprise a first optical cavity located within the PIC, a tunable mirror to form a first optical path between the first mirror in the gain media and the first tunable mirror, and a frequency tunable intra-cavity dual tone resonator positioned within the first optical cavity to constrain the first optical cavity having a common optical path to produce tow primary laser tones with a tunable frequency spacing. A photo detector is optically coupled to the PIC and configured to mix the two primary laser tones to form an RF output signal with a frequency selected by the tunable frequency spacing of the two primary tones.

Disclosed is a laser system including a first laser and a second laser. The first laser includes a laser cavity, and a gas phase molecular gain medium disposed in the laser cavity, the gain medium having an absorption band. The second laser is a solid state laser configured to be continuously tunable, with respect to an emission wavelength of the second laser, over the absorption band of the gain medium, and the second laser is tuned to pump rotational vibrational transitions in the gain medium to achieve a rotational population inversion.

A measurement device includes: an optical gain unit for generating and amplifying light; a transmission optical band variation unit for selecting a specific optical frequency band from the light generated by the optical gain unit, and varying the selected specific optical frequency band to transmit light; a resonant optical frequency variation unit for performing a frequency variation so that multiple resonant optical frequency orders within the specific optical frequency band vary over a variation range narrower than intervals between the respective orders; resonance induction units forming an optical resonance unit which includes the optical gain unit, the transmission optical band variation unit, and the resonant optical frequency variation unit and causes selective oscillation of light having a specific resonant optical frequency within a specific transmission optical band; and a control signal unit for varying each of the transmission optical band variation unit and the resonant optical frequency variation unit.

A frequency modulated, continuous wave (FMCW) laser using a microchip gain medium, an optical coupling element, and a tuning element is described. The laser may be part of a coherent laser ranging system.

Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.

Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.