An optically pumped on-chip solid-state laser includes a solid gain media substrate and a laser generating structure disposed above the solid gain media substrate. The laser generating structure includes a resonator, a pump light input structure, and a laser light output structure; and the resonator is disposed between the pump light input structure and the laser light output structure, and is propped against or is in clearance fit with the solid gain media substrate.

The present application discloses a cavity dumped low repetition rate infrared tunable femtosecond laser source configured to produce pulses of 200 femtoseconds or less with a peak power of four megawatts or more for use in a variety of applications including multi-photon microscopy.

A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length. The thermal load corresponding to the threshold when the pump power is decreased, the ESA thermal load corresponding to the threshold when the pump power is decreased, and the ESA thermal load at the optimal operating point are obtained

Disclosed is a laser system that includes a femtosecond oscillator, a regenerative amplifier for chirped pulse amplification of femtosecond laser pulses, and a compressor. The regenerative amplifier includes a plurality of positive Group Delay Dispersion (GDD) mirrors disposed within a cavity of the regenerative amplifier. The compressor receives amplified laser pulses from the regenerative amplifier.

A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length. The thermal load corresponding to the threshold when the pump power is decreased, the ESA thermal load corresponding to the threshold when the pump power is decreased, and the ESA thermal load at the optimal operating point are obtained

A device and a method for measuring a thermal load caused by energy transfer upconversion in a laser gain crystal. Increasing the pump power multiple times so that the power meter obtains multiple thresholds for a single-frequency laser; obtaining an average pump threshold of the output laser; obtaining cavity parameters of the single-frequency laser; obtaining thermal focal lengths on the tangential and sagittal planes of the laser gain crystal inside the single-frequency laser; obtaining individual ABCD matrices of the laser system on the tangential and the sagittal planes; obtaining a thermal load at the threshold based on the ABCD transfer matrix of the laser gain crystal on the tangential plane, the ABCD transfer matrix of the laser gain crystal on the sagittal plane, and the average pump threshold of the laser system; obtaining a thermal load caused by ETU at threshold based on the thermal load at the threshold.

Disclosed is a laser system that incudes a chirped fiber oscillator, a laser amplifier, and a compressor. The laser amplifier includes a laser Faraday isolator. The fiber oscillator output is directly coupled to the laser Faraday isolator.

Disclosed is a laser system that includes a femtosecond oscillator, a regenerative amplifier for chirped pulse amplification of femtosecond laser pulses, and a compressor. The regenerative amplifier includes a plurality of positive Group Delay Dispersion (GDD) mirrors disposed within a cavity of the regenerative amplifier. The compressor receives amplified laser pulses from the regenerative amplifier.

The present application discloses a cavity dumped low repetition rate infrared tunable femtosecond laser source configured to produce pulses of 200 femtoseconds or less with a peak power of four megawatts or more for use in a variety of applications including multi-photon microscopy.

A narrow-band diode pumped alkali laser (DPAL) comprising a diode emitter assembly of broad area diode lasers arranged in a stack or array to emit longitudinally at a power level in a power range of 10-1500 W through a frequency selective element assembly aligned and positioned in an external laser cavity to the diode emitter assembly. The frequency selective element assembly comprising: an optical cell containing alkali vapor positioned between a pair of crossed polarizers; a partially reflective mirror that reflects a portion of light passing through the optical cell back toward the diode emitter assembly; and magnetic field producing components that produce a magnetic field through the optical cell that creates a 90 polarization of light passing through the optical cell at a narrow-band frequency corresponding to the absorption line of alkali atom, attenuating components of the light passing through the optical cell at frequencies outside of the narrow-band frequency.