A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

A femtosecond pulse laser apparatus includes a pump light source configured to provide a pump light, a gain medium configured to obtain a gain of a laser light using the pump light, a first curved mirror and a second curved mirror, which are provided at both sides of the gain medium, an output mirror configured to transmit a portion of the laser light and reflect the other portion of the laser light to the gain medium, a mode locking portion configured to generate a femtosecond pulse of the laser light, and an acoustic wave generator configured to provide an acoustic wave into the gain medium so as to adjust self-phase modulation of the laser light.

A delay mirror 1 includes a base 2, and an optical multilayer film 4 formed on a surface R of the base 2. The value of a group delay in a first wavelength band according to the optical multilayer film 4 is different from the value of the group delay in the second wavelength band according to the optical multilayer film 4, and the value of a group delay dispersion in the first wavelength band according to the optical multilayer film 4 and the value of the group delay dispersion in the second wavelength band according to the optical multilayer film 4 are each not less than −100 fs.sup.2 and not greater than 100 fs.sup.2. Further, the delay mirror system includes a delay mirror movement mechanism which moves the delay mirror 1 such that the number of times of reflection is changed.

A system for determining an absolute carrier-envelope phase (CEP) of ultrashort laser pulses includes a laser system for generating a laser beam including ultrashort optical pulses of a duration of less than 10 fs, an ultrabroadband quarter-wave plate configured to polarize the laser beam, and a gas jet emitting a continuous jet stream into the laser beam. The system includes focusing optics to adjust a focal spot of the laser beam to the gas jet, and a detector arrangement including a beam block and a microchannel plate (MCP) imaging detector, wherein the laser beam is directed to the detector arrangement. The method involves using angular streaking to determine the absolute CEP of both elliptically and linearly polarized light.

An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.

A method and a system for generating intense, ultrashort pulses of XUV and soft X-ray radiation via high-order harmonic generation (HHG), the method comprising selecting a nonlinear solid target and a laser source; separating a beam from the laser source into a first laser beam and a second laser beam; focusing the first laser beam onto the nonlinear solid target, thereby generating a laser ablated plume; and compressing and frequency-doubling the second laser beam and directing a resulting second compressed and frequency-doubled laser beam to the laser ablated plume, thereby yielding high-order harmonic generation of radiation of photon energies in a range between 12 eV and 36 eV. A high-order harmonic source of radiation, comprising a nonlinear solid target; a laser source; a beam splitter separating a beam from the laser source into a first beam line and a second beam line; the first beam line comprising a first focusing unit directing a first, uncompressed, laser beam onto the nonlinear solid target, to generate a laser ablated plume; and the second beam line directing a second, compressed and frequency-doubled laser beam, to the laser ablated plume, yielding high-order harmonic generation of radiation of photon energies in a range between 12 eV and 36 eV.

A method and a laser for breaking through the limitation of fluorescence spectrum on laser wavelength is disclosed. The method includes: exciting electrons to a high energy level by pump light, and suppressing an oscillation of radiation light by laser cavity coating, using a laser resonance to enhance a transition probability of an electron-phonon coupling from the high energy level to a multi-phonon coupling level, so as to realize the emission and enhancement of breakthrough fluorescence spectrum and realize the radiation light oscillation, wherein the laser cavity includes an incident mirror, a folding mirror, a tuning element and an exit mirror arranged in sequence along an optical path direction, the laser gain medium is located between an incident mirror and a folding mirror in the laser resonator, and the tuning element is arranged in the laser cavity at a Brewster angle.

A single-frequency laser apparatus comprises a mirror and a volume Bragg grating (VBG) reflector defining a laser cavity therebetween and an optical gain material for emitting and amplifying an intra-cavity beam in the laser cavity. The optical gain material comprises a transition-metal doped crystal such as a crystal doped with transition-metal ions selected from one or more of Ti.sup.3+ ions, Cr.sup.2+ ions, Cr.sup.3+ ions or Cr.sup.4+ ions. A reflectivity spectrum of the VBG reflector and an optical length of the laser cavity are selected so that a beam output from the laser cavity is a single-frequency output beam and/or includes only one longitudinal mode of the laser cavity. The laser apparatus may provide a robust, compact, low cost, high-power wavelength adjustable (from approximately 650 to 950 nm), narrow linewidth (<100 kHz), single frequency laser source which is suitable for a wide range of applications from laser sensing, spectroscopy, and high precision frequency metrology sectors.

An optically pumped on-chip solid-state laser includes a solid gain media substrate and a laser generating structure disposed above the solid gain media substrate. The laser generating structure includes a resonator, a pump light input structure, and a laser light output structure; and the resonator is disposed between the pump light input structure and the laser light output structure, and is propped against or is in clearance fit with the solid gain media substrate.

A laser apparatus includes: (A) a solid-state laser apparatus that outputs burst seed pulsed light containing a plurality of pulses; (B) an excimer amplifier that amplifies the burst seed pulsed light in a discharge space in a single occurrence of discharge and outputs the amplified light as amplified burst pulsed light; (C) an energy sensor that measures the energy of the amplified burst pulsed light; and (D) a laser controller that corrects the timing at which the solid-state laser apparatus is caused to output the burst seed pulsed light based on the relationship of the difference between the timing at which the solid-state laser apparatus outputs the burst seed pulsed light and the timing at which the discharge occurs in the discharge space with a measured value of the energy.