A degenerate four-wave mixing (DFWM) squeezed light apparatus includes one or more pump beams, a probe beam, a vapor cell, a repump beam, and a detector. The one or more pump beams includes an input power of no greater than about 150 mW. The vapor cell includes an atomic vapor configured to interact with overlapped pump and probe beams to generate an amplified probe beam and a conjugate beam. The repump beam is configured to optically pump the atomic vapor to a ground state and decrease atomic decoherence of the atomic vapor. The detector is configured to measure squeezing due to quantum correlations between the amplified probe beam and the conjugate beam. The one or more pump beams, the probe beam, and the repump beam are configured to generate two-mode squeezed light by DFWM with squeezing of at least 3 dB below shot noise.

An optical material including: a silica host; and a Praseodymium dopant; wherein the Praseodymium atoms are configured to form nanoclusters in the silica host. In addition, the optical material may include an Ytterbium co-dopant. The nanoclusters include Ge, Te, Ta, Lu and/or F, Cl to minimize multi-phonon quenching. Moreover, the nanoclusters may be encapsulated in a low phonon energy shell to minimize energy transfer to the host matrix.

A degenerate four-wave mixing (DFWM) squeezed light apparatus includes one or more pump beams, a probe beam, a vapor cell, a repump beam, and a detector. The one or more pump beams includes an input power of no greater than about 150 mW. The vapor cell includes an atomic vapor configured to interact with overlapped pump and probe beams to generate an amplified probe beam and a conjugate beam. The repump beam is configured to optically pump the atomic vapor to a ground state and decrease atomic decoherence of the atomic vapor. The detector is configured to measure squeezing due to quantum correlations between the amplified probe beam and the conjugate beam. The one or more pump beams, the probe beam, and the repump beam are configured to generate two-mode squeezed light by DFWM with squeezing of at least 3 dB below shot noise.

A single-mode micro-laser based on a single whispering gallery mode optical microcavity and a preparation method thereof described includes: preparing a desired single whispering gallery mode optical microcavity doped with rare earth ions or containing a gain material such as quantum dots, wherein an optical microcavity configuration include a micro-disk cavity, a ring-shaped microcavity, and a racetrack-shaped microcavity; a material type include lithium niobate, silicon dioxide, silicon nitride, etc.; preparing an optical fiber cone or an optical waveguide of a required size which can excite high-order modes of the optical microcavity, such as a ridge waveguide and a circular waveguides; and coupling, integrating, and packaging the optical fiber cone or the optical waveguide with the microcavity. A pump light is coupled to the optical fiber cone or the optical waveguide to excite a compound mode with a polygonal configuration.

The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

A light concentrator includes a luminescent concentrator and a gain medium. The luminescent concentrator includes a semiconductor material and the semiconductor material absorbs first photons. The first photons have energy greater than or equal to a threshold energy, and the semiconductor material emits second photons through a spontaneous emission process where the second photons have less energy than the first photons. The gain medium is optically coupled to the luminescent concentrator to receive the second photons. The gain medium absorbs the second photons, and in response to absorbing the second photons, the gain medium emits third photons through a stimulated emission process. The third photons have less energy than the second photons.

Technologies are described for methods to fabricate lasers to amplify light. The methods may comprise depositing nanoparticles on a substrate. The length, width, and height of the nanoparticles may be less than 100 nm. The methods may further comprise distributing the nanoparticles on the substrate to produce a film. The nanoparticles in the film may be coupled nanoparticles. The coupled nanoparticles may be in disordered contact with each other within the film. The distribution may be performed such that constructive interference of the light occurs by multiple scattering at the boundaries of the coupled nanoparticles within the film. The methods may comprise exposing the film to a power source.

The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

Objects and/or grouped emitters are anti-symmetrically excited. The anti-symmetric radiation emitted by the objects generate an interference pattern with a node in the spacing between the objects. The spacing may be sub-wavelength and/or below a resolution limit for the emitted radiation. Samples within the spacing may be detected via distortion to the inference pattern and visualized (including sub-resolution limit features) either directly or through reconstruction analysis from the interference pattern.