An assembly (10) for generating a laser beam (12) includes a beam steering assembly (18); a laser assembly (16) that is tunable over a tunable range; and a controller (20). The laser assembly (16) generates a laser beam (12) that is directed at the beam steering assembly (18). The controller (20) dynamically controls the beam steering assembly (18) to dynamically steer the laser beam (12) as the laser assembly (16) is tuned over at least a portion of the tunable range. As a result thereof, the laser beam (12) is actively steered along a desired beam path (12A) while the wavelength of the laser beam (12) is varied.

A base member for a light emitting device includes a bottom part and a frame part. The frame part has an upper surface, a lower surface, and a step portion. The frame part has a bonding surface bonded to the bottom part, and defining a planar surface of the step portion at a lower surface side, first and second inner surfaces, a first planar surface defining a planar surface of the step portion at an upper surface side, and first and second electrode layers electrically connected to each other, the second electrode layer being disposed on the first planar surface while the first electrode layer being not disposed on the first planar surface. The step portion extends along an entire periphery of the frame part in a bottom view, and the step portion does not extend along the entire periphery of the frame part in a top view.

An optical device includes: a substrate having a first surface, and a second surface opposite of the first surface; a plurality of surface emitting laser elements provided on the first surface of the substrate and configured to emit light in a direction intersecting the first surface; a plurality of optical elements disposed on the second surface so as to respectively correspond to the plurality of surface emitting laser elements; and an anti-reflection structure between the substrate and the plurality of optical elements.

An optical device includes: a substrate having a first surface, and a second surface opposite of the first surface; a plurality of surface emitting laser elements provided on the first surface of the substrate and configured to emit light in a direction intersecting the first surface; a plurality of optical elements disposed on the second surface so as to respectively correspond to the plurality of surface emitting laser elements; and an anti-reflection structure between the substrate and the plurality of optical elements.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×10.sup.18/cm.sup.3 of n-type impurity.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×10.sup.18/cm.sup.3 of n-type impurity.

To provide a light-emitting apparatus capable of shaping light from a plurality of light-emitting elements into light with a plurality of shapes and a manufacturing method thereof. A light-emitting apparatus according to the present disclosure, including: a substrate; a plurality of light-emitting elements which are provided on a side of a first surface of the substrate; and a plurality of first lenses which are provided on a side of a second surface of the substrate and on which light emitted from the plurality of light-emitting elements is incident, wherein the plurality of first lenses include at least two types of lenses among a concave lens, a convex lens, and a flat lens.

To provide a light-emitting apparatus capable of shaping light from a plurality of light-emitting elements into light with a plurality of shapes and a manufacturing method thereof. A light-emitting apparatus according to the present disclosure, including: a substrate; a plurality of light-emitting elements which are provided on a side of a first surface of the substrate; and a plurality of first lenses which are provided on a side of a second surface of the substrate and on which light emitted from the plurality of light-emitting elements is incident, wherein the plurality of first lenses include at least two types of lenses among a concave lens, a convex lens, and a flat lens.

A support structure for mounting an optical assembly above an optoelectronic device, the optical assembly comprising an electrically conductive structure, the support structure comprising: a first surface for supporting an optical assembly; and an electrically conductive lead, wherein said electrically conductive lead comprises: a first electrical interface portion adjacent to the first surface for forming an electrical contact with an electrically conductive structure of an optical assembly supported by the first surface; a second electrical interface portion on a side opposing the first surface, and wherein the electrically conductive lead extends from the first electrical interface portion to the second electrical interface portion so as to maintain an optical assembly supported on the first surface and the second electrical interface portion in electrical contact.

A support structure for mounting an optical assembly above an optoelectronic device, the optical assembly comprising an electrically conductive structure, the support structure comprising: a first surface for supporting an optical assembly; and an electrically conductive lead, wherein said electrically conductive lead comprises: a first electrical interface portion adjacent to the first surface for forming an electrical contact with an electrically conductive structure of an optical assembly supported by the first surface; a second electrical interface portion on a side opposing the first surface, and wherein the electrically conductive lead extends from the first electrical interface portion to the second electrical interface portion so as to maintain an optical assembly supported on the first surface and the second electrical interface portion in electrical contact.