Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

A support structure for mounting an optical assembly above an optoelectronic device, the optical assembly comprising an electrically conductive structure, the support structure comprising: a first surface for supporting an optical assembly; and an electrically conductive lead, wherein said electrically conductive lead comprises: a first electrical interface portion adjacent to the first surface for forming an electrical contact with an electrically conductive structure of an optical assembly supported by the first surface; a second electrical interface portion on a side opposing the first surface, and wherein the electrically conductive lead extends from the first electrical interface portion to the second electrical interface portion so as to maintain an optical assembly supported on the first surface and the second electrical interface portion in electrical contact.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

A light emitting device includes a plurality of semiconductor laser elements, a frame part, a light-reflective member, a plurality of wires, and first and second protective elements. The frame part has a pair of first inner lateral surfaces and a second inner surface. The light-reflective member is configured to reflect laser light traveling from at least one of the plurality of semiconductor laser elements toward one of the first inner lateral surfaces of the frame part. The wires electrically connect the semiconductor laser elements respectively to an upper surface of the frame part. The first and second protective elements are disposed on the upper surface of the frame part in an area of the upper surface along the second inner surface. At least one of the wires is bonded on an area of the upper surface between the first and second protective elements.

A light emitting device includes a plurality of semiconductor laser elements, a frame part, a light-reflective member, a plurality of wires, and first and second protective elements. The frame part has a pair of first inner lateral surfaces and a second inner surface. The light-reflective member is configured to reflect laser light traveling from at least one of the plurality of semiconductor laser elements toward one of the first inner lateral surfaces of the frame part. The wires electrically connect the semiconductor laser elements respectively to an upper surface of the frame part. The first and second protective elements are disposed on the upper surface of the frame part in an area of the upper surface along the second inner surface. At least one of the wires is bonded on an area of the upper surface between the first and second protective elements.

Provided herein is a semiconductor package and method of forming the same. The semiconductor package has a cap including a first window wafer with a first face and opposing second face, a second window wafer, and a perforated spacer wafer with through-holes extending therethrough. The first and second faces of the first window wafer are mutually parallel and at least one face includes an antireflective surface. The spacer wafer is disposed between the first and second window wafers with the first and second window wafers bonded to opposing faces of the spacer wafer. The window wafers and spacer wafer together define a cavity in the cap. An edge-emitting laser diode is disposed on a submount and configured to direct a laser beam at normal incidence to the first face of the first window wafer. The cap is mounted on the submount with the edge-emitting laser diode enclosed in the cavity.

A semiconductor laser module includes a semiconductor laser element that outputs a laser beam, a cathode that is for causing a current to flow through the semiconductor laser element, and a heat sink that dissipates heat generated in the semiconductor laser element. The heat sink includes an anode, a first insulating layer located at a position farther away from the semiconductor laser element than the anode, and a water passage portion located at a position farther away from the semiconductor laser element than the first insulating layer. The water passage portion is formed by metal and includes a part of a flow path of water for dissipation of heat generated in the semiconductor laser element.

A semiconductor laser module includes a semiconductor laser element that outputs a laser beam, a cathode that is for causing a current to flow through the semiconductor laser element, and a heat sink that dissipates heat generated in the semiconductor laser element. The heat sink includes an anode, a first insulating layer located at a position farther away from the semiconductor laser element than the anode, and a water passage portion located at a position farther away from the semiconductor laser element than the first insulating layer. The water passage portion is formed by metal and includes a part of a flow path of water for dissipation of heat generated in the semiconductor laser element.